The role of oxygen plasma in the formation of oxygen defects in HfOx films deposited at room temperature
出版年份 2015 全文链接
标题
The role of oxygen plasma in the formation of oxygen defects in HfOx films deposited at room temperature
作者
关键词
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出版物
Journal of Materials Chemistry C
Volume 3, Issue 16, Pages 4104-4114
出版商
Royal Society of Chemistry (RSC)
发表日期
2015-03-09
DOI
10.1039/c4tc02838d
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- (2014) Ling Yan Liang et al. ACS Applied Materials & Interfaces
- Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices
- (2014) O. Khaldi et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Electrical properties improvement of high-k HfO2 films by combination of C4F8 dual-frequency capacitively coupled plasmas treatment with thermal annealing
- (2014) H.Y. Zhang et al. APPLIED SURFACE SCIENCE
- Effects of oxygen plasma treatment on the surface properties of Ga-doped ZnO thin films
- (2013) Ya Xue et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Oxygen Plasma Functioning of Charge Carrier Density in Zinc Oxide Thin-Film Transistors
- (2013) Min-Ching Chu et al. Applied Physics Express
- The optical properties of hydrophilic Hf-doped HfO2 nanoceramic films
- (2013) Su-Shia Lin et al. CERAMICS INTERNATIONAL
- RETRACTED: Structural, morphological, optical and photoluminescence properties of HfO 2 thin films
- (2013) C.Y. Ma et al. THIN SOLID FILMS
- Effect of oxygen plasma on the surface states of ZnO films used to produce thin-film transistors on soft plastic sheets
- (2013) Jagan Singh Meena et al. Journal of Materials Chemistry C
- High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment
- (2012) Pradipta K. Nayak et al. APPLIED PHYSICS LETTERS
- Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition
- (2012) Deok-Yong Cho et al. CHEMISTRY OF MATERIALS
- Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors
- (2012) Christophe Avis et al. JOURNAL OF MATERIALS CHEMISTRY
- Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications
- (2012) A. Salaün et al. THIN SOLID FILMS
- Paper Electronics
- (2011) Daniel Tobjörk et al. ADVANCED MATERIALS
- Effects of Mg on the electrical characteristics and thermal stability of MgxZn1−xO thin film transistors
- (2011) Chieh-Jen Ku et al. APPLIED PHYSICS LETTERS
- Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy
- (2011) Jae Hyuck Jang et al. JOURNAL OF APPLIED PHYSICS
- Defect passivation by O2 plasma treatment on high-k dielectric HfO2 films at room temperature
- (2011) Kou-Chen Liu et al. THIN SOLID FILMS
- Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors
- (2010) C. Vallée et al. APPLIED PHYSICS LETTERS
- Frequency Effect on Voltage Linearity of $ \hbox{ZrO}_{2}$-Based RF Metal–Insulator–Metal Capacitors
- (2010) T. Bertaud et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature
- (2010) Jae Sang Lee et al. IEEE ELECTRON DEVICE LETTERS
- Resistance switching in HfO2 metal-insulator-metal devices
- (2010) P. Gonon et al. JOURNAL OF APPLIED PHYSICS
- Improved reliability from a plasma-assisted metal-insulator-metal capacitor comprising a high-k HfO2 film on a flexible polyimide substrate
- (2010) Jagan Singh Meena et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Structure, optical properties and thermal stability of pulsed sputter deposited high temperature HfOx/Mo/HfO2 solar selective absorbers
- (2010) N. Selvakumar et al. SOLAR ENERGY MATERIALS AND SOLAR CELLS
- Role of low-frequency power in dual-frequency capacitive discharges
- (2009) S. K. Ahn et al. APPLIED PHYSICS LETTERS
- Bulk and Interface effects on voltage linearity of ZrO2–SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications
- (2009) S. D. Park et al. APPLIED PHYSICS LETTERS
- The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2
- (2009) Keith McKenna et al. APPLIED PHYSICS LETTERS
- Radiation Induced Change in Defect Density in ${\hbox {HfO}}_{2}$-Based MIM Capacitors
- (2009) Bing Miao et al. IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Low-temperature ozone passivation for improving the quality of sputtered HfOx thin-film
- (2009) Shih-Ching Chen et al. MATERIALS LETTERS
- Observation of negative capacitances in metal-insulator-metal devices based on a-BaTiO3:H
- (2008) F. El Kamel et al. APPLIED PHYSICS LETTERS
- Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing
- (2008) Kenji Nomura et al. APPLIED PHYSICS LETTERS
- The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors
- (2008) Bing Miao et al. JOURNAL OF APPLIED PHYSICS
- Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors
- (2008) Ch. Wenger et al. JOURNAL OF APPLIED PHYSICS
- Electric-field-induced submicrosecond resistive switching
- (2008) N. Das et al. PHYSICAL REVIEW B
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