On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying

出版年份 2015 全文链接

标题

作者

关键词

出版物

Volume 62, Issue 12, Pages 4029-4036

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2015-10-30

DOI

10.1109/ted.2015.2490545

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