Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance

标题
Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance
作者
关键词
RRAM, Nitrogen doping, Multilevel storage, Oxygen vacancy, First-principle method
出版物
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 775, Issue -, Pages 1301-1306
出版商
Elsevier BV
发表日期
2018-10-23
DOI
10.1016/j.jallcom.2018.10.249

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