标题
2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage
作者
关键词
-
出版物
Advanced Electronic Materials
Volume -, Issue -, Pages 1800944
出版商
Wiley
发表日期
2019-03-29
DOI
10.1002/aelm.201800944
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Nonvolatile Memories Based on Graphene and Related 2D Materials
- (2019) Simone Bertolazzi et al. ADVANCED MATERIALS
- Synaptic Barristor Based on Phase-Engineered 2D Heterostructures
- (2018) Woong Huh et al. ADVANCED MATERIALS
- A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications
- (2018) Chunsen Liu et al. Nature Nanotechnology
- Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures
- (2018) Tiancheng Song et al. SCIENCE
- Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
- (2018) Vinod K. Sangwan et al. NATURE
- Recommended Methods to Study Resistive Switching Devices
- (2018) Mario Lanza et al. Advanced Electronic Materials
- Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing
- (2018) Xiaojian Zhu et al. NATURE MATERIALS
- Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides
- (2017) Ruijing Ge et al. NANO LETTERS
- Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes
- (2017) Xu Cui et al. NANO LETTERS
- Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe2
- (2017) Chunsen Liu et al. Small
- Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared
- (2017) Jianlu Wang et al. Small
- Human eye-inspired soft optoelectronic device using high-density MoS2-graphene curved image sensor array
- (2017) Changsoon Choi et al. Nature Communications
- Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T′-MoS2 on Graphene for Enhanced Photoresponse
- (2017) Weili Cui et al. Advanced Electronic Materials
- Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents
- (2016) Chaitanya U. Kshirsagar et al. ACS Nano
- Nonvolatile Charge Injection Memory Based on Black Phosphorous 2D Nanosheets for Charge Trapping and Active Channel Layers
- (2016) Young Tack Lee et al. ADVANCED FUNCTIONAL MATERIALS
- Creating the Smallest BN Nanotube from Bilayer h-BN
- (2016) Tao Xu et al. ADVANCED FUNCTIONAL MATERIALS
- Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications
- (2016) Chunxue Hao et al. ADVANCED FUNCTIONAL MATERIALS
- Van der Waals Force Isolation of Monolayer MoS2
- (2016) Alper Gurarslan et al. ADVANCED MATERIALS
- Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure
- (2016) Yu-Qi Wang et al. ADVANCED MATERIALS
- Colloidal Synthesis of Uniform-Sized Molybdenum Disulfide Nanosheets for Wafer-Scale Flexible Nonvolatile Memory
- (2016) Donghee Son et al. ADVANCED MATERIALS
- High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
- (2016) Jingli Wang et al. ADVANCED MATERIALS
- 2D Mica Crystal as Electret in Organic Field-Effect Transistors for Multistate Memory
- (2016) Xiaotao Zhang et al. ADVANCED MATERIALS
- Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers
- (2016) M. Piquemal-Banci et al. APPLIED PHYSICS LETTERS
- Exploiting Refresh Effect of DRAM Read Operations: A Practical Approach to Low-Power Refresh
- (2016) Young-Ho Gong et al. IEEE TRANSACTIONS ON COMPUTERS
- Improved Short-Channel Characteristics With Long Data Retention Time in Extreme Short-Channel Flash Memory Devices
- (2016) Deepika Gupta et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors
- (2016) G. He et al. NANO LETTERS
- Toward negligible charge loss in charge injection memories based on vertically integrated 2D heterostructures
- (2016) Dongri Qiu et al. Nano Research
- Charge trap memory based on few-layer black phosphorus
- (2016) Qi Feng et al. Nanoscale
- Ultrafast optical switching of infrared plasmon polaritons in high-mobility graphene
- (2016) G. X. Ni et al. Nature Photonics
- 2D materials and van der Waals heterostructures
- (2016) K. S. Novoselov et al. SCIENCE
- Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
- (2016) Quoc An Vu et al. Nature Communications
- Room temperature spin valve effect in NiFe/WS2/Co junctions
- (2016) Muhammad Zahir Iqbal et al. Scientific Reports
- Room temperature spin valve effect in the NiFe/Gr–hBN/Co magnetic tunnel junction
- (2016) Muhammad Zahir Iqbal et al. Journal of Materials Chemistry C
- Van der Waals heterostructures and devices
- (2016) Yuan Liu et al. Nature Reviews Materials
- Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors
- (2015) Ahmet Avsar et al. ACS Nano
- All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures
- (2015) Shanshan Wang et al. ACS Nano
- Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus-Boron Nitride-MoS2Heterostructures
- (2015) Dong Li et al. ADVANCED FUNCTIONAL MATERIALS
- Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets
- (2015) Peifu Cheng et al. NANO LETTERS
- Memory leads the way to better computing
- (2015) H.-S. Philip Wong et al. Nature Nanotechnology
- Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
- (2015) Vinod K. Sangwan et al. Nature Nanotechnology
- Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
- (2015) Xu Cui et al. Nature Nanotechnology
- Quantum transport at the Dirac point: Mapping out the minimum conductivity from pristine to disordered graphene
- (2015) Redwan N. Sajjad et al. PHYSICAL REVIEW B
- Interlayer dependent polarity of magnetoresistance in graphene spin valves
- (2015) M. Z. Iqbal et al. Journal of Materials Chemistry C
- Multibit Data Storage States Formed in Plasma-Treated MoS2 Transistors
- (2014) Mikai Chen et al. ACS Nano
- Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling
- (2014) Yuchen Du et al. ACS Nano
- Tunable Charge-Trap Memory Based on Few-Layer MoS2
- (2014) Enze Zhang et al. ACS Nano
- Feasibility Study of ${\rm SrRuO}_{3}/{\rm SrTiO}_{3}/{\rm SrRuO}_{3}$ Thin Film Capacitors in DRAM Applications
- (2014) Dan Popescu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors
- (2014) Michele Buscema et al. NANO LETTERS
- Tunnel magnetoresistance with atomically thin two-dimensional hexagonal boron nitride barriers
- (2014) André Dankert et al. Nano Research
- Layered memristive and memcapacitive switches for printable electronics
- (2014) Alexander A. Bessonov et al. NATURE MATERIALS
- Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
- (2014) Rajesh Kappera et al. NATURE MATERIALS
- Black phosphorus field-effect transistors
- (2014) Likai Li et al. Nature Nanotechnology
- Floating Gate Memory-based Monolayer MoS2Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics
- (2014) Jingli Wang et al. Small
- Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride
- (2014) M. Venkata Kamalakar et al. Scientific Reports
- Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications
- (2013) Jing-Kai Huang et al. ACS Nano
- Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
- (2013) Simone Bertolazzi et al. ACS Nano
- Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
- (2013) Gwan-Hyoung Lee et al. ACS Nano
- Basic principles of STT-MRAM cell operation in memory arrays
- (2013) A V Khvalkovskiy et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films
- (2013) Han Liu et al. NANO LETTERS
- Spin valve effect of NiFe/graphene/NiFe junctions
- (2013) Muhammad Zahir Iqbal et al. Nano Research
- Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
- (2012) Weijie Zhao et al. ACS Nano
- Origin of self-heating effect induced asymmetrical degradation behavior in InGaZnO thin-film transistors
- (2012) Tien-Yu Hsieh et al. APPLIED PHYSICS LETTERS
- Reliability of $\hbox{SrRuO}_{3}\hbox{/SrTiO}_{3}\hbox{/SrRuO}_{3}$ Stacks for DRAM Applications
- (2012) S. Kupke et al. IEEE ELECTRON DEVICE LETTERS
- A 2T1C Embedded DRAM Macro With No Boosted Supplies Featuring a 7T SRAM Based Repair and a Cell Storage Monitor
- (2012) Ki Chul Chun et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
- (2012) Daniele Braga et al. NANO LETTERS
- Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
- (2012) Liam Britnell et al. NANO LETTERS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
- (2012) L. Britnell et al. SCIENCE
- Two-Dimensional Dielectric Nanosheets: Novel Nanoelectronics From Nanocrystal Building Blocks
- (2011) Minoru Osada et al. ADVANCED MATERIALS
- Bulk Planar Junctionless Transistor (BPJLT): An Attractive Device Alternative for Scaling
- (2011) Suresh Gundapaneni et al. IEEE ELECTRON DEVICE LETTERS
- Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
- (2011) Leitao Liu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Ni(111)|graphene|h-BN junctions as ideal spin injectors
- (2011) V. M. Karpan et al. PHYSICAL REVIEW B
- Tunneling path toward spintronics
- (2011) Guo-Xing Miao et al. REPORTS ON PROGRESS IN PHYSICS
- A Mechanism for Dependence of Refresh Time on Data Pattern in DRAM
- (2010) Myoung Jin Lee et al. IEEE ELECTRON DEVICE LETTERS
- Ultrathin HfON Trapping Layer for Charge-Trap Memory Made by Atomic Layer Deposition
- (2010) Jyun-Yi Wu et al. IEEE ELECTRON DEVICE LETTERS
- Emerging Photoluminescence in Monolayer MoS2
- (2010) Andrea Splendiani et al. NANO LETTERS
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
- Physical Insights on BJT-Based 1T DRAM Cells
- (2009) Zhenming Zhou et al. IEEE ELECTRON DEVICE LETTERS
- Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride
- (2009) Oleg V. Yazyev et al. PHYSICAL REVIEW B
- Magnetoresistance in Double Spin Filter Tunnel Junctions with Nonmagnetic Electrodes and its Unconventional Bias Dependence
- (2009) Guo-Xing Miao et al. PHYSICAL REVIEW LETTERS
- Cloud computing and emerging IT platforms: Vision, hype, and reality for delivering computing as the 5th utility
- (2008) Rajkumar Buyya et al. Future Generation Computer Systems-The International Journal of eScience
- Future hard disk drive systems
- (2008) Roger Wood JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
- Prediction of very large values of magnetoresistance in a graphene nanoribbon device
- (2008) Woo Youn Kim et al. Nature Nanotechnology
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started