Toward negligible charge loss in charge injection memories based on vertically integrated 2D heterostructures

Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus-Boron Nitride-MoS2Heterostructures

(2015) Dong Li et al.   ADVANCED FUNCTIONAL MATERIALS

Full-range electrical characteristics of WS2 transistors

(2015) Jatinder Kumar et al.   APPLIED PHYSICS LETTERS

Transport properties of unrestricted carriers in bridge-channel MoS2field-effect transistors

(2015) Dongri Qiu et al.   Nanoscale

High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films

(2015) M Waqas Iqbal et al.   Scientific Reports

Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors

(2015) Dongri Qiu et al.   Scientific Reports

Multibit Data Storage States Formed in Plasma-Treated MoS2 Transistors

(2014) Mikai Chen et al.   ACS Nano

Tunable Charge-Trap Memory Based on Few-Layer MoS2

(2014) Enze Zhang et al.   ACS Nano

Few-Layer MoS2: A Promising Layered Semiconductor

(2014) Rudren Ganatra et al.   ACS Nano

Electrical Transport Properties of Single-Layer WS2

(2014) Dmitry Ovchinnikov et al.   ACS Nano

Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2Heterostructure Transistors

(2014) Nengjie Huo et al.   ADVANCED FUNCTIONAL MATERIALS

Graphene Based Non-Volatile Memory Devices

(2014) Xiaomu Wang et al.   ADVANCED MATERIALS

High-performance photocurrent generation from two-dimensional WS2 field-effect transistors

(2014) Seung Hwan Lee et al.   APPLIED PHYSICS LETTERS

Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?

(2014) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

(2014) A. Mishchenko et al.   Nature Nanotechnology

Ab initiotheory of moiré superlattice bands in layered two-dimensional materials

(2014) Jeil Jung et al.   PHYSICAL REVIEW B

Floating Gate Memory-based Monolayer MoS2Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics

(2014) Jingli Wang et al.   Small

Electron transport of WS2 transistors in a hexagonal boron nitride dielectric environment

(2014) Freddie Withers et al.   Scientific Reports

MoS2 nanosheet channel and guanine DNA-base charge injection layer for high performance memory transistors

(2014) Junyeong Lee et al.   Journal of Materials Chemistry C

Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

(2013) Simone Bertolazzi et al.   ACS Nano

Towards the Development of Flexible Non-Volatile Memories

(2013) Su-Ting Han et al.   ADVANCED MATERIALS

Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices

(2013) Kallol Roy et al.   Nature Nanotechnology

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

(2013) Min Sup Choi et al.   Nature Communications

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

(2012) Rusen Yan et al.   APPLIED PHYSICS LETTERS

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

(2012) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

(2012) Daniele Braga et al.   NANO LETTERS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Electronic compressibility of layer-polarized bilayer graphene

(2012) A. F. Young et al.   PHYSICAL REVIEW B

Graphene Flash Memory

(2011) Augustin J. Hong et al.   ACS Nano

Two-Dimensional Dielectric Nanosheets: Novel Nanoelectronics From Nanocrystal Building Blocks

(2011) Minoru Osada et al.   ADVANCED MATERIALS

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

(2011) Gwan-Hyoung Lee et al.   APPLIED PHYSICS LETTERS

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Quasiparticle Band Gap Engineering of Graphene and Graphone on Hexagonal Boron Nitride Substrate

(2011) Neerav Kharche et al.   NANO LETTERS

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene

(2009) Wenjuan Zhu et al.   PHYSICAL REVIEW B