Floating Gate Memory-based Monolayer MoS2Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics

Multibit Data Storage States Formed in Plasma-Treated MoS2 Transistors

(2014) Mikai Chen et al.   ACS Nano

Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

(2013) Simone Bertolazzi et al.   ACS Nano

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

(2013) Gwan-Hyoung Lee et al.   ACS Nano

Measurement of mobility in dual-gated MoS2 transistors

(2013) Michael S. Fuhrer et al.   Nature Nanotechnology

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

(2013) Min Sup Choi et al.   Nature Communications

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

Future Prospects of NAND Flash Memory Technology—The Evolution from Floating Gate to Charge Trapping to 3D Stacking

(2012) Chih-Yuan Lu   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Memory Devices Using a Mixture of MoS2and Graphene Oxide as the Active Layer

(2012) Zongyou Yin et al.   Small

MoS2Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel

(2012) Hee Sung Lee et al.   Small

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Recent progress in gold nanoparticle-based non-volatile memory devices

(2011) Jang-Sik Lee   GOLD BULLETIN

Developments in nanocrystal memory

(2011) Ting-Chang Chang et al.   Materials Today

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature

(2011) Hai Li et al.   Small

Modeling of Barrier-Engineered Charge-Trapping nand Flash Devices

(2010) Hang-Ting Lue et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

High-speed graphene transistors with a self-aligned nanowire gate

(2010) Lei Liao et al.   NATURE

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

A nonvolatile memory capacitor based on Au nanocrystals with HfO2 tunneling and blocking layers

(2009) V. Mikhelashvili et al.   APPLIED PHYSICS LETTERS

Future challenges of flash memory technologies

(2008) Chih-Yuan Lu et al.   MICROELECTRONIC ENGINEERING

Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion

(2008) K. Kakushima et al.   SOLID-STATE ELECTRONICS