Article
Materials Science, Multidisciplinary
Eunpyo Park, Jae Eun Seo, Gichang Noh, Yooyeon Jo, Dong Yeon Woo, In Soo Kim, Jongkil Park, Jaewook Kim, YeonJoo Jeong, Suyoun Lee, Inho Kim, Jong-Keuk Park, Sangbum Kim, Jiwon Chang, Joon Young Kwak
Summary: Two-dimensional materials have shown promising potential for applications in non-volatile memory and neuromorphic systems. By constructing a floating gate memory with a pentagonal 2D layered PdSe2 channel, we achieve low power consumption, reliable retention time, and multi-bit conductance states.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Materials Science, Multidisciplinary
Muhammad Asghar Khan, Sungbin Yim, Shania Rehman, Faisal Ghafoor, Honggyun Kim, Harshada Patil, Muhammad Farooq Khan, Jonghwa Eom
Summary: This study demonstrates a multi-functional device based on heterostructures of transition metal dichalcogenides (TMDCs) with a metal floating gate. Among the TMDCs materials tested, n-type SnS2 exhibits high endurance, good retention, and the highest current ON/OFF ratio for program and erase states. The SnS2 device shows synaptic behavior, high linearity, and stable operation, achieving the highest accuracy in image recognition simulation.
MATERIALS TODAY ADVANCES
(2023)
Review
Multidisciplinary Sciences
Qing Zhang, Chunsen Liu, Peng Zhou
Summary: As the size of transistors decrease, the use of silicon material faces challenges due to its fundamental limits. Additionally, energy and time are consumed by data transmission outside of transistor computing due to speed mismatch. To meet the energy efficiency demands of big data computing, transistors need smaller feature sizes and faster data storage. Two-dimensional (2D) materials, with their atomic thickness and dangling-bond-free surface, offer advantages in transistor scaling-down and heterogeneous structure innovation. This review discusses the opportunities, progress, and challenges of 2D materials in transistor applications, starting from the performance breakthrough of 2D transistors.
Article
Chemistry, Multidisciplinary
Yue Pang, Yaoqiang Zhou, Lei Tong, Jianbin Xu
Summary: This study presents a molybdenum disulfide (MoS2) asymmetric-dual-gate field-effect transistor (ADGFET) with independently controlled double gates, which can achieve logic function, nonvolatile memory, and tunable photoresponse. The multifunctional applications demonstrate that the ADGFET provides a feasible way to integrate logic, memory, and sensing into one device architecture.
Article
Chemistry, Multidisciplinary
Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio
Summary: Two-dimensional heterostructures have been extensively studied as NVM devices, but their operation mechanisms are not fully understood. Detailed operation mechanisms have been elucidated by exploiting FG voltage measurements, revealing three current-limiting paths controlling tunneling behavior between the channel and FG, and emphasizing the importance of the access region in achieving 2D channel/FG tunneling.
Review
Chemistry, Multidisciplinary
Zheng-Dong Luo, Ming-Min Yang, Yang Liu, Marin Alexe
Summary: Semiconductor technology is rapidly evolving, with potential for revolutionary innovations at the material and working principle level. The combination of 2D semiconductors and functional ferroelectrics offers new working principles and enhanced device performance, with the possibility of applications beyond traditional silicon systems. Recent demonstrations of novel device concepts based on 2D semiconductor/ferroelectric heterostructures are critically reviewed, highlighting their potential for driving exciting innovations in modern electronics.
ADVANCED MATERIALS
(2021)
Article
Chemistry, Physical
Ionel Stavarache, Ovidiu Cojocaru, Valentin Adrian Maraloiu, Valentin Serban Teodorescu, Toma Stoica, Magdalena Lidia Ciurea
Summary: This study investigated Al2O3/Ge/Al2O3 trilayer memory structures deposited on p-Si substrates, revealing different effects of rapid thermal annealing (RTA) at various temperatures on the structure, morphology, and memory properties. The results showed changes in Ge diffusion, formation of Ge nanocrystals and mixed oxide nanoparticles at different annealing temperatures, leading to variations in the memory window size and charge loss behavior over time.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Multidisciplinary
Arun Kumar, Enver Faella, Ofelia Durante, Filippo Giubileo, Aniello Pelella, Loredana Viscardi, Kimberly Intonti, Stephan Sleziona, Marika Schleberger, Antonio Di Bartolomeo
Summary: In this study, a simple approach for a nonvolatile opto-electronic memory device based on a MoS2 transistor with light induced charge storage capability is presented. The device exhibits a high on/off current ratio and hysteresis width modulation by air pressure, and shows persistent photoconductivity with excellent photo responsive memory performance. Furthermore, the combination of gate voltage and light can be used to control the transistor current and increase the memory window significantly.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
(2023)
Review
Chemistry, Multidisciplinary
Gang Bian, Jun Yin, Jian Zhu
Summary: COFs are a burgeoning family of crystalline porous copolymers that allow for precise atomic insertion of organic components to form periodic networks and ordered nanopores. The review focuses on the electronic properties of conductive 2D-COFs and their applications in various fields, highlighting the potential for essential innovations in electronics and energy-related areas.
Article
Multidisciplinary Sciences
Kaichen Zhu, Sebastian Pazos, Fernando Aguirre, Yaqing Shen, Yue Yuan, Wenwen Zheng, Osamah Alharbi, Marco A. Villena, Bin Fang, Xinyi Li, Alessandro Milozzi, Matteo Farronato, Miguel Munoz-Rojo, Tao Wang, Ren Li, Hossein Fariborzi, Juan B. Roldan, Guenther Benstetter, Xixiang Zhang, Husam N. Alshareef, Tibor Grasser, Huaqiang Wu, Daniele Ielmini, Mario Lanza
Summary: In this study, high-integration-density 2D-CMOS hybrid microchips for memristive applications were fabricated, with CMOS transistors providing excellent control over hexagonal boron nitride memristors. Logic gates were constructed, and spike-timing dependent plasticity signals suitable for spiking neural networks were measured.
Article
Nanoscience & Nanotechnology
Jia-Qin Yang, Ye Zhou, Su-Ting Han
Summary: The development of artificial intelligence and big data analytics is revolutionizing data processing and storage methods, requiring new computing systems to address speed and energy consumption issues. Advances in various data storage technologies have made functional computing possible, while an overview of current memory systems and their development history provides required figure of merits for applications like in-memory computing and identifies critical issues for future development.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Physical
Jing Zhao, Zheng Wei, Xixi Yang, Guangyu Zhang, Zhonglin Wang
Summary: The novel MoS2 nonvolatile memory combined with nanographene as floating gate enables multilevel storage state triggered by both mechanical and optical stimulation without needing extra gate voltages. The device demonstrates high programming/erasing current ratio, performance stability over cycles, and retention time exceeding 105 seconds. The extremely high photoresponsivity of MoS2 optical memory and stable flexibility make it feasible for integrated devices in wearable applications.
Article
Materials Science, Multidisciplinary
Sin-En Li, Guan-Zhang Lu, Ji-Lin Shen, Meng-Jer Wu, Yu-Ting Chen, Mujahid Mustaqeem, Yang-Fang Chen
Summary: This study presents a first attempt to achieve multifunctional nonvolatile memory based on all 2D heterostructures, demonstrating long-term stability and nonvolatile characteristics under both optical and electrical control signals.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Physics, Multidisciplinary
Shiyao Shu, Ting Xu, Jie Su
Summary: The solution mixing method was used to synthesize polymer semiconductor nanoparticles (NPs) of poly(9,9-dioctylflfluorene-co-benzothiadiazole) (F8BT), which were then mixed with poly(methyl methacrylate) (PMMA) to prepare an integrated floating-gate/tunneling layer. This layer was utilized to fabricate flexible floating-gate based organic field-effect transistor non-volatile memories (F-OFET-NVMs). The microstructure of the memory devices' floating-gate/tunneling layer was found to significantly affect the device performance.
Article
Multidisciplinary Sciences
Asir Intisar Khan, Alwin Daus, Raisul Islam, Kathryn M. Neilson, Hye Ryoung Lee, H-S Philip Wong, Eric Pop
Summary: This study demonstrates a reduced switching current density and multi-level operation in flexible superlattice PCM, with excellent performance even after repeated bending and cycling, paving the way for low-power memory in flexible electronics. It also provides key insights for PCM optimization on conventional silicon substrates.
Article
Chemistry, Multidisciplinary
Shuiyuan Wang, Chunsheng Chen, Zhihao Yu, Yongli He, Xiaoyao Chen, Qing Wan, Yi Shi, David Wei Zhang, Hao Zhou, Xinran Wang, Peng Zhou
ADVANCED MATERIALS
(2019)
Review
Nanoscience & Nanotechnology
Chunsen Liu, Huawei Chen, Shuiyuan Wang, Qi Liu, Yu-Gang Jiang, David Wei Zhang, Ming Liu, Peng Zhou
NATURE NANOTECHNOLOGY
(2020)
Article
Chemistry, Multidisciplinary
Xiang Hou, Chunsen Liu, Yi Ding, Lan Liu, Shuiyuan Wang, Peng Zhou
Article
Multidisciplinary Sciences
Shuiyuan Wang, Lan Liu, Lurong Gan, Huawei Chen, Xiang Hou, Yi Ding, Shunli Ma, David Wei Zhang, Peng Zhou
Summary: This study presents a ferroelectric semiconductor channel device with non-volatile memory and neural computation functions, demonstrating remarkable performance in terms of ultra-fast write speed, endurance, low energy consumption, and high-precision recognition classification simulation.
NATURE COMMUNICATIONS
(2021)
Article
Chemistry, Multidisciplinary
Xiaohe Huang, Chunsen Liu, Senfeng Zeng, Zhaowu Tang, Shuiyuan Wang, Xiaozhang Chen, David Wei Zhang, Peng Zhou
Summary: The 2D ultrathin MBCFET with 2 nm/2 nm MoS2 channels demonstrates higher normalized drive current and lower leakage current compared to the latest seven-level-stacked Si MBCFET.
ADVANCED MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Lan Liu, Chunsen Liu, Lilai Jiang, Jiayi Li, Yi Ding, Shuiyuan Wang, Yu-Gang Jiang, Ya-Bin Sun, Jianlu Wang, Shiyou Chen, David Wei Zhang, Peng Zhou
Summary: The study demonstrates an ultrafast non-volatile flash memory based on MoS2/hBN/multilayer graphene, achieving very fast writing/erasing speeds through improved Fowler-Nordheim tunneling. Suitable barrier height, gate coupling ratio, and clean interface are identified as key factors for the breakthrough performance of the flash memory devices.
NATURE NANOTECHNOLOGY
(2021)
Review
Chemistry, Multidisciplinary
Shuiyuan Wang, Xiaoxian Liu, Peng Zhou
Summary: The fusion of 2D materials with silicon ICs shows potential to drive advanced performance in ICs, overcome challenges in silicon ICs, and create technologies beyond the von Neumann architecture.
ADVANCED MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Zhenhan Zhang, Shuiyuan Wang, Chunsen Liu, Runzhang Xie, Weida Hu, Peng Zhou
Summary: This study introduces a hardware device inspired by the retina, with all-in-one perception, memory, and computing capabilities for the detection and recognition of moving objects. It achieves fast and efficient detection and recognition, outperforming previous results.
NATURE NANOTECHNOLOGY
(2022)
Article
Physics, Applied
Liping Xu, Hao Xiong, Zhichao Fu, Menghan Deng, Shuiyuan Wang, Jinzhong Zhang, Liyan Shang, Kai Jiang, Yawei Li, Liangqing Zhu, Liang He, Zhigao Hu, Junhao Chu
Summary: High-performance artificial synaptic devices based on 2D HfS2/h-BN/FG-graphene heterostructures have been designed, showing competitive performances with high on:off ratio, large memory window, excellent charge retention ability, and robust durability. Artificial optoelectronic synapses built on these devices demonstrate impressive large conductance margin, good linearity, low energy consumption, and high recognition accuracy, paving the way for efficient optogenetics-inspired neuromorphic computing.
PHYSICAL REVIEW APPLIED
(2021)
Review
Chemistry, Physical
Shuiyuan Wang, Xiaoxian Liu, Mingsheng Xu, Liwei Liu, Deren Yang, Peng Zhou
Summary: Despite technical upgrades, silicon limitations are hindering the progress of complementary metal-oxide-semiconductor circuits. Two-dimensional materials are being explored as potential candidates to compensate for silicon deficiencies. This article attempts to bridge two-dimensional materials with silicon technology, discussing material synthesis, device design, and circuit integration requirements.
Article
Nanoscience & Nanotechnology
Xiaohe Huang, Chunsen Liu, Zhaowu Tang, Senfeng Zeng, Shuiyuan Wang, Peng Zhou
Summary: In-memory computing can enhance energy efficiency by directly implementing multiply accumulate (MAC) operations in a low-energy crossbar memory array. However, the lack of nonlinear activation and the power-intensive activation processes limit the overall efficiency. To address this, we developed an ultrafast bipolar flash memory that can execute self-activated MAC operations with low power consumption. By utilizing atomically sharp van der Waals heterostructures, the flash memory device achieves high program speed and endurance, while the self-activated MAC method demonstrates accuracy close to the conventional method with separated MAC and activation operations.
NATURE NANOTECHNOLOGY
(2023)
Article
Chemistry, Multidisciplinary
Xiaoxian Liu, Shuiyuan Wang, Ziye Di, Haoqi Wu, Chunsen Liu, Peng Zhou
Summary: The authors developed an optoelectronic synapse using violet phosphorene and molybdenum disulfide, achieving a high light-to-dark ratio and remarkable synaptic properties. This technology enables high-precision image classification and opens new possibilities for using phosphorene in optoelectronics.
Article
Chemistry, Physical
Yin Xia, Xinyu Chen, Jinchen Wei, Shuiyuan Wang, Shiyou Chen, Simin Wu, Minbiao Ji, Zhengzong Sun, Zihan Xu, Wenzhong Bao, Peng Zhou
Summary: This study reports an improved chemical vapor deposition synthesis method for growing large-area high-quality 2D semiconductor films with fast and non-toxic growth, which has the potential to reduce manufacturing costs.
Article
Multidisciplinary Sciences
Siwei Xue, Shuiyuan Wang, Tianxiang Wu, Ziye Di, Nuo Xu, Yibo Sun, Chaofan Zeng, Shunli Ma, Peng Zhou
Summary: Neuromorphic computing enables efficient processing of data-intensive tasks, but it often requires a large number of artificial synapses and neurons, resulting in bulky systems and high energy consumption. This study demonstrates a hybrid neuromorphic hardware that integrates 2D MoS2 synaptic arrays and CMOS neural circuitry, achieving alphabetic and numeric recognition with a lower number of synapses and neurons. The hybrid hardware exhibits competitive accuracy and energy consumption.
Article
Engineering, Electrical & Electronic
Yibo Sun, Shuiyuan Wang, Senfeng Zeng, Xiaohe Huang, Peng Zhou
Summary: The device based on a van der Waals heterojunction integrates versatile functions including AND/OR logic computing, nonvolatile memory, and rectification. It shows tunable logic behavior with a current ratio of 100 and maintains state differences after 100 cycles when used as memory, making it a promising candidate for in-memory computing applications. The multifunctional integration based on a van der Waals heterojunction paves the way for the construction of highly area- and energy-efficient chips.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
