A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology

Extraction of Process Variation Parameters in FinFET Technology Based on Compact Modeling and Characterization

(2018) Zhe Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reliable high-yield CNTFET-based 9T SRAM operating near threshold voltage region

(2018) Pramod Kumar Patel et al.   Journal of Computational Electronics

An efficient majority-based compressor for approximate computing in the nano era

(2017) Mohammad Hossein Moaiyeri et al.   MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS

Design and analysis of a gate-all-around CNTFET-based SRAM cell

(2017) G. Saiphani Kumar et al.   Journal of Computational Electronics

Performance analysis and enhancement of 10-nm GAA CNTFET-based circuits in the presence of CNT-metal contact resistance

(2017) Mohammad Hossein Moaiyeri et al.   Journal of Computational Electronics

Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology

(2016) Behzad Zeinali et al.   INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS

An Ultra-Low-Power 9T SRAM Cell Based on Threshold Voltage Techniques

(2015) Majid Moghaddam et al.   CIRCUITS SYSTEMS AND SIGNAL PROCESSING

A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages

(2015) Behzad Ebrahimi et al.   INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS

Robust FinFET SRAM design based on dynamic back-gate voltage adjustment

(2014) Behzad Ebrahimi et al.   MICROELECTRONICS RELIABILITY

Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric

(2012) D Nirmal et al.   INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS

Statistical Design Optimization of FinFET SRAM Using Back-Gate Voltage

(2010) Behzad Ebrahimi et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

SRAM Read/Write Margin Enhancements Using FinFETs

(2009) Andrew Carlson et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

Characterization of a Novel Nine-Transistor SRAM Cell

(2008) Zhiyu Liu et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS