Performance analysis and enhancement of 10-nm GAA CNTFET-based circuits in the presence of CNT-metal contact resistance

标题
Performance analysis and enhancement of 10-nm GAA CNTFET-based circuits in the presence of CNT-metal contact resistance
作者
关键词
Gate-all-around CNTFET, Contact resistance, Contact length, FinFET, Performance evaluation
出版物
Journal of Computational Electronics
Volume 16, Issue 2, Pages 240-252
出版商
Springer Nature
发表日期
2017-03-27
DOI
10.1007/s10825-017-0980-0

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