AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
出版年份 2018 全文链接
标题
AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
作者
关键词
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出版物
Micromachines
Volume 9, Issue 11, Pages 546
出版商
MDPI AG
发表日期
2018-10-26
DOI
10.3390/mi9110546
参考文献
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