Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates

出版年份 2016 全文链接

标题

Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates

作者

关键词

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出版物

IEEE ELECTRON DEVICE LETTERS

Volume 37, Issue 1, Pages 28-30

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2015-11-21

DOI

10.1109/led.2015.2502221

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