期刊
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
卷 27, 期 4, 页码 530-538出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TSM.2014.2352301
关键词
Measurements; capacitance measurements; Gallium compounds
In this paper, we present a contactless, capacitive method of estimating the resistivity profiles in the direction perpendicular to the semiconductor wafer using frequency domain impedance analysis. Employing a simple model, we show that the different resistivity distributions inside a wafer affect the frequency dependencies of the measured effective capacitance and the Q-factor. We also demonstrate how to estimate resistivity variation inside the sample from the experimental data: C(omega) and Q(omega).
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