Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

(2013) Dennis Christy et al.   Applied Physics Express

Microstructural defects in GaN thin films grown on chemically vapor-deposited graphene layers

(2013) Hyobin Yoo et al.   APPLIED PHYSICS LETTERS

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

(2013) Ferdinando Iucolano et al.   APPLIED PHYSICS LETTERS

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

(2013) Yuhao Zhang et al.   APPLIED PHYSICS LETTERS

Nanoscale structural and electrical evolution of Ta- and Ti-based contacts on AlGaN/GaN heterostructures

(2013) G. Greco et al.   JOURNAL OF APPLIED PHYSICS

AlGaN/GaN-on-Silicon Metal–Oxide–Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 m$\Omega$$\cdot$cm$^{2}$ Using a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process

(2012) Xinke Liu et al.   Applied Physics Express

In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN

(2012) Barry Brennan et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

(2012) S. Tripathy et al.   APPLIED PHYSICS LETTERS

Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation

(2012) Kai Cheng et al.   JOURNAL OF CRYSTAL GROWTH

AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology

(2011) Hyung-Seok Lee et al.   IEEE ELECTRON DEVICE LETTERS

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

(2011) G. Greco et al.   JOURNAL OF APPLIED PHYSICS

Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

(2010) Hiroshi Kambayashi et al.   SOLID-STATE ELECTRONICS

Reduction of dislocations in GaN films on AlN/sapphire templates using CrN nanoislands

(2008) Jun-Seok Ha et al.   APPLIED PHYSICS LETTERS