Impact of Metal Salt Precursor on Low-Temperature Annealed Solution-Derived Ga-doped In2O3 Semiconductor for Thin-Film Transistors

标题
Impact of Metal Salt Precursor on Low-Temperature Annealed Solution-Derived Ga-doped In2O3 Semiconductor for Thin-Film Transistors
作者
关键词
-
出版物
Journal of Physical Chemistry C
Volume 115, Issue 23, Pages 11773-11780
出版商
American Chemical Society (ACS)
发表日期
2011-05-25
DOI
10.1021/jp202522s

向作者/读者发起求助以获取更多资源

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started