A solution-processed yttrium oxide gate insulator for high-performance all-solution-processed fully transparent thin film transistors

标题
A solution-processed yttrium oxide gate insulator for high-performance all-solution-processed fully transparent thin film transistors
作者
关键词
-
出版物
JOURNAL OF MATERIALS CHEMISTRY
Volume 22, Issue 39, Pages 21265
出版商
Royal Society of Chemistry (RSC)
发表日期
2012-08-29
DOI
10.1039/c2jm34162j

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