Scaling equivalent oxide thickness with flat band voltage (VFB) modulation using in situ Ti and Hf interposed in a metal/high-k gate stack

标题
Scaling equivalent oxide thickness with flat band voltage (VFB) modulation using in situ Ti and Hf interposed in a metal/high-k gate stack
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 108, Issue 6, Pages 064107
出版商
AIP Publishing
发表日期
2010-09-21
DOI
10.1063/1.3481453

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