Maximized Benefit of La–Al–O Higher-$k$ Gate Dielectrics by Optimizing the La/Al Atomic Ratio

标题
Maximized Benefit of La–Al–O Higher-$k$ Gate Dielectrics by Optimizing the La/Al Atomic Ratio
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 3, Pages 288-290
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2011-02-04
DOI
10.1109/led.2010.2103043

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