Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators

Role of Thermal Heating on the Voltage Induced Insulator-Metal Transition inVO2

(2013) A. Zimmers et al.   PHYSICAL REVIEW LETTERS

Optical Conductivity Measurements ofGaTa4Se8Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition

(2013) V. Ta Phuoc et al.   PHYSICAL REVIEW LETTERS

Avalanche breakdown in GaTa4Se8−xTe x narrow-gap Mott insulators

(2013) V. Guiot et al.   Nature Communications

Insulator–Metal Transitions Induced by Electric Field and Photoirradiation in Organic Mott Insulator Deuterated κ-(BEDT-TTF)2Cu[N(CN)2]Br

(2012) Farzana Sabeth et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Collective bulk carrier delocalization driven by electrostatic surface charge accumulation

(2012) M. Nakano et al.   NATURE

Emergent phenomena at oxide interfaces

(2012) H. Y. Hwang et al.   NATURE MATERIALS

Current oscillations in vanadium dioxide: Evidence for electrically triggered percolation avalanches

(2012) Tom Driscoll et al.   PHYSICAL REVIEW B

Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers

(2012) J. Tranchant et al.   THIN SOLID FILMS

Memory effects in complex materials and nanoscale systems

(2011) Yuriy V. Pershin et al.   ADVANCES IN PHYSICS

Control of the Electronic Properties and Resistive Switching in the New Series of Mott Insulators GaTa4Se8–yTey(0 ≤y≤ 6.5)

(2011) V. Guiot et al.   CHEMISTRY OF MATERIALS

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

(2010) Laurent Cario et al.   ADVANCED MATERIALS

Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films

(2010) S. Asanuma et al.   APPLIED PHYSICS LETTERS

Electrical oscillations induced by the metal-insulator transition in VO2

(2010) Hyun-Tak Kim et al.   JOURNAL OF APPLIED PHYSICS

Half-Metallic Ferromagnetism and Large Negative Magnetoresistance in the New Lacunar Spinel GaTi3VS8

(2010) Eugen Dorolti et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

First evidence of resistive switching in polycrystalline GaV4S8 thin layers

(2010) Emeline Souchier et al.   Physica Status Solidi-Rapid Research Letters

Nonequilibrium electronic transport in a one-dimensional Mott insulator

(2010) F. Heidrich-Meisner et al.   PHYSICAL REVIEW B

Dielectric breakdown in a Mott insulator: Many-body Schwinger-Landau-Zener mechanism studied with a generalized Bethe ansatz

(2010) Takashi Oka et al.   PHYSICAL REVIEW B

Dielectric Breakdown of Mott Insulators in Dynamical Mean-Field Theory

(2010) Martin Eckstein et al.   PHYSICAL REVIEW LETTERS

An Emergent Change of Phase for Electronics

(2010) H. Takagi et al.   SCIENCE

Electric-Field-Assisted Nanostructuring of a Mott Insulator

(2009) Vincent Dubost et al.   ADVANCED FUNCTIONAL MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Taming the Mott Transition for a Novel Mott Transistor

(2008) Isao H. Inoue et al.   ADVANCED FUNCTIONAL MATERIALS

Electric-Pulse-driven Electronic Phase Separation, Insulator-Metal Transition, and Possible Superconductivity in a Mott Insulator

(2008) Cristian Vaju et al.   ADVANCED MATERIALS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Electric-pulse-induced resistive switching and possible superconductivity in the Mott insulator GaTa4Se8

(2008) C. Vaju et al.   MICROELECTRONIC ENGINEERING