Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing
出版年份 2014 全文链接
标题
Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing
作者
关键词
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出版物
JOURNAL OF APPLIED PHYSICS
Volume 116, Issue 4, Pages 043709
出版商
AIP Publishing
发表日期
2014-07-29
DOI
10.1063/1.4891244
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