Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory
出版年份 2015 全文链接
标题
Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory
作者
关键词
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出版物
Journal of Materials Chemistry C
Volume 3, Issue 20, Pages 5207-5213
出版商
Royal Society of Chemistry (RSC)
发表日期
2015-04-14
DOI
10.1039/c5tc00451a
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