标题
Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory
作者
关键词
Resistive switching, Selector, Memory, Nonlinearity, Silicon oxide, Vanadium
出版物
Nanoscale Research Letters
Volume 13, Issue 1, Pages -
出版商
Springer Nature America, Inc
发表日期
2018-08-23
DOI
10.1186/s11671-018-2660-9
参考文献
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注意：仅列出部分参考文献，下载原文获取全部文献信息。- Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices
- (2018) Alessandro Bricalli et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A C–Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application
- (2018) Solomon Amsalu Chekol et al. NANOTECHNOLOGY
- Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device
- (2018) Yawar Abbas et al. Scientific Reports
- Electronic bipolar resistive switching behavior in Ni/VOx/Al device
- (2017) Mengseng Xia et al. Materials Science and Engineering B-Advanced Functional Solid-State Materials
- Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
- (2017) Chih-Yang Lin et al. Nanoscale
- Nano-cone resistive memory for ultralow power operation
- (2017) Sungjun Kim et al. NANOTECHNOLOGY
- Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device
- (2017) Sungjun Kim et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiN x -based resistive memory
- (2017) Min-Hwi Kim et al. SOLID-STATE ELECTRONICS
- Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure
- (2017) Xiaobing Yan et al. Journal of Materials Chemistry C
- Electronic bipolar resistive switching behavior in Ni/VOx/Al device
- (2017) Mengseng Xia et al. Materials Science and Engineering B-Advanced Functional Solid-State Materials
- Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures
- (2016) Sungjun Kim et al. APPLIED PHYSICS LETTERS
- Self-Selection RRAM Cell With Sub- $\mu \text{A}$ Switching Current and Robust Reliability Fabricated by High- $K$ /Metal Gate CMOS Compatible Technology
- (2016) Peng Huang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Tuning resistive switching parameters in Si 3 N 4 -based RRAM for three-dimensional vertical resistive memory applications
- (2016) Sungjun Kim et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering
- (2016) Zongwei Wang et al. NANOTECHNOLOGY
- 3D Ta/TaOx/TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications
- (2016) I-Ting Wang et al. NANOTECHNOLOGY
- Roles of oxygen and nitrogen in control of nonlinear resistive behaviors via filamentary and homogeneous switching in an oxynitride thin film memristor
- (2016) Yu-Chuan Shih et al. RSC Advances
- Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
- (2015) Sungjun Kim et al. APPLIED PHYSICS LETTERS
- Electroforming free resistive switching memory in two-dimensional VOx nanosheets
- (2015) M. K. Hota et al. APPLIED PHYSICS LETTERS
- Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
- (2015) Umesh Chand et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Self-rectifying resistive switching behavior observed in Si 3 N 4 -based resistive random access memory devices
- (2015) Hee-Dong Kim et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer
- (2014) Byoung Kuk You et al. ACS Nano
- Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon
- (2014) Cong Ye et al. Applied Physics Express
- Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization
- (2014) Yao-Feng Chang et al. JOURNAL OF APPLIED PHYSICS
- Quantum-size effects in hafnium-oxide resistive switching
- (2013) Shibing Long et al. APPLIED PHYSICS LETTERS
- Multilevel resistive switching memory with amorphous InGaZnO-based thin film
- (2013) Ching-Hui Hsu et al. APPLIED PHYSICS LETTERS
- Atom probe study of Cu2ZnSnSe4 thin-films prepared by co-evaporation and post-deposition annealing
- (2013) T. Schwarz et al. APPLIED PHYSICS LETTERS
- Nanometer-Scale ${\rm HfO}_{x}$ RRAM
- (2013) Zhiping Zhang et al. IEEE ELECTRON DEVICE LETTERS
- High-κ Al2O3/WOxBilayer Dielectrics for Low-Power Resistive Switching Memory Applications
- (2013) Writam Banerjee et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Oxide Heterostructure Resistive Memory
- (2013) Yuchao Yang et al. NANO LETTERS
- Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices
- (2013) Franklin J. Wong et al. SOLID-STATE ELECTRONICS
- Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
- (2013) Shibing Long et al. Scientific Reports
- TaOx-based resistive switching memories: prospective and challenges
- (2013) Amit Prakash et al. Nanoscale Research Letters
- Study of polarity effect in SiOx-based resistive switching memory
- (2012) Yao-Feng Chang et al. APPLIED PHYSICS LETTERS
- Resistive switching in silicon suboxide films
- (2012) Adnan Mehonic et al. JOURNAL OF APPLIED PHYSICS
- Electrically tailored resistance switching in silicon oxide
- (2012) Adnan Mehonic et al. NANOTECHNOLOGY
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications
- (2011) Jiun-Jia Huang et al. IEEE ELECTRON DEVICE LETTERS
- Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM
- (2011) Ming-Chi Wu et al. IEEE ELECTRON DEVICE LETTERS
- Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation
- (2011) Yi Wu et al. JOURNAL OF APPLIED PHYSICS
- Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications
- (2011) Xinjun Liu et al. NANOTECHNOLOGY
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Bipolar resistance switching driven by tunnel barrier modulation in TiOx/AlOx bilayered structure
- (2010) Seung Jae Baik et al. APPLIED PHYSICS LETTERS
- $\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current
- (2010) Yi Wu et al. IEEE ELECTRON DEVICE LETTERS
- Multilevel resistive switching in Ti/CuxO/Pt memory devices
- (2010) Sheng-Yu Wang et al. JOURNAL OF APPLIED PHYSICS
- Resistive Switches and Memories from Silicon Oxide
- (2010) Jun Yao et al. NANO LETTERS
- Complementary resistive switches for passive nanocrossbar memories
- (2010) Eike Linn et al. NATURE MATERIALS
- Multilevel resistive switching with ionic and metallic filaments
- (2009) Ming Liu et al. APPLIED PHYSICS LETTERS
- Stackable All-Oxide-Based Nonvolatile Memory With $ \hbox{Al}_{2}\hbox{O}_{3}$ Antifuse and $\hbox{p-CuO}_{x}/ \hbox{n-InZnO}_{x}$ Diode
- (2009) Seung-Eon Ahn et al. IEEE ELECTRON DEVICE LETTERS
- Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses
- (2008) Daniele Ielmini PHYSICAL REVIEW B
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