Study of polarity effect in SiOx-based resistive switching memory

Memory switching properties of e-beam evaporated SiOx on N++ Si substrate

(2012) Yanzhen Wang et al.   APPLIED PHYSICS LETTERS

High temperature thermal properties of thin tantalum nitride films

(2011) Elah Bozorg-Grayeli et al.   APPLIED PHYSICS LETTERS

Oxygen-Soluble Gate Electrodes for Prolonged High-$ \kappa$ Gate-Stack Reliability

(2011) Nagarajan Raghavan et al.   IEEE ELECTRON DEVICE LETTERS

Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure

(2011) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Developments in nanocrystal memory

(2011) Ting-Chang Chang et al.   Materials Today

Resistive Switches and Memories from Silicon Oxide

(2010) Jun Yao et al.   NANO LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Etching-dependent reproducible memory switching in vertical SiO2 structures

(2008) Jun Yao et al.   APPLIED PHYSICS LETTERS

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution

(2008) I. H. Inoue et al.   PHYSICAL REVIEW B