Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
出版年份 2017 全文链接
标题
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
作者
关键词
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出版物
Nanoscale
Volume 9, Issue 25, Pages 8586-8590
出版商
Royal Society of Chemistry (RSC)
发表日期
2017-05-05
DOI
10.1039/c7nr02305g
参考文献
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