Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography

标题
Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 96, Issue 11, Pages 113508
出版商
AIP Publishing
发表日期
2010-03-18
DOI
10.1063/1.3358149

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