High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

标题
High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 93, Issue 3, Pages 033516
出版商
AIP Publishing
发表日期
2008-07-29
DOI
10.1063/1.2956393

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