Effects of sidewall etching on electrical properties of SiOx resistive random access memory
出版年份 2013 全文链接
标题
Effects of sidewall etching on electrical properties of SiOx resistive random access memory
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 103, Issue 21, Pages 213505
出版商
AIP Publishing
发表日期
2013-11-21
DOI
10.1063/1.4832595
参考文献
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