Unipolar Switching in Pt∕GeSe[sub x]Te[sub 1−x]∕Pt

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio

(2009) Jeung-hyun Jeong et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programing

(2008) Suyoun Lee et al.   APPLIED PHYSICS LETTERS

Low current resistive switching in Cu–SiO2 cells

(2008) C. Schindler et al.   APPLIED PHYSICS LETTERS

Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

(2008) Doo Seok Jeong et al.   JOURNAL OF APPLIED PHYSICS