Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programing

Published 2008 View Full Article

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Title
Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programing
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 24, Pages 243507
Publisher
AIP Publishing
Online
2008-06-20
DOI
10.1063/1.2945284

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