期刊
CRYSTAL RESEARCH AND TECHNOLOGY
卷 47, 期 3, 页码 307-312出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/crat.201100408
关键词
GaN; Si; plasma-assisted molecular beam epitaxy; MBE
资金
- European Union [POIG.01.03.01-00-159/08]
In this work we present details of growth of GaN epitaxial layers on Si(111) substrates by molecular beam epitaxy (MBE) with the use of RF nitrogen plasma source. We focus on preparation of silicon substrate before the growth, on procedure of AlN buffer growth initiation (aluminum or nitrogen first) and on influence of III/N ratio on structural properties of the layers. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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