Journal
APPLIED SURFACE SCIENCE
Volume 257, Issue 16, Pages 7217-7220Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2011.03.093
Keywords
GaN epilayers; Strain; X-ray diffraction; Raman scattering
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Funding
- Program for New Century Excellent Talents in University
- Tianjin Development Program of Science and Technology [06ZHXPZH03000]
- Tianjin Natural Science Foundation [10JCYBJC03000]
- Hebei Natural Science Foundation [F2009000124]
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We report the growth of GaN epilayers on the sapphire substrate etched by MOCVD. Sapphire substrate is etched by H(3)PO(4) and NaOH. The Raman scattering spectroscopy and photoetching analyses show that the substrate etched can effectively decrease the residual stress and the dislocations density in these epilayers. The X-ray diffraction analysis shows the process can reduce the value of the FWHM. Therefore, the quality of GaN epilayers should be improved by substrate etched. (C) 2011 Elsevier B.V. All rights reserved.
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