标题
The improved resistive switching of HfO2:Cu film with multilevel storage
作者
关键词
HfO2, Resistive Switching, High Resistance State, Resistive Random Access Memory, Switching Voltage
出版物
JOURNAL OF MATERIALS SCIENCE
Volume 50, Issue 21, Pages 7043-7047
出版商
Springer Nature
发表日期
2015-07-20
DOI
10.1007/s10853-015-9257-9
参考文献
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