The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics

Published 2010 View Full Article

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Title
The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 518, Issue 24, Pages 7455-7459
Publisher
Elsevier BV
Online
2010-05-11
DOI
10.1016/j.tsf.2010.05.022

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