A catalytic alloy approach for graphene on epitaxial SiC on silicon wafers

Controlling the surface roughness of epitaxial SiC on silicon

(2014) N. Mishra et al.   JOURNAL OF APPLIED PHYSICS

Epitaxial graphene on SiC: from carrier density engineering to quasi-free standing graphene by atomic intercalation

(2014) S Forti et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

(2014) Benjamin V Cunning et al.   NANOTECHNOLOGY

Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films

(2013) Francesca Iacopi et al.   APPLIED PHYSICS LETTERS

Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes

(2013) G. Reza Yazdi et al.   CARBON

Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV

(2013) B. Gupta et al.   CARBON

Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

(2013) Enrique Escobedo-Cousin et al.   JOURNAL OF APPLIED PHYSICS

Raman spectroscopy as a versatile tool for studying the properties of graphene

(2013) Andrea C. Ferrari et al.   Nature Nanotechnology

Site-Selective Epitaxy of Graphene on Si Wafers

(2013) Hirokazu Fukidome et al.   PROCEEDINGS OF THE IEEE

Epitaxial graphene on single domain 3C-SiC(100) thin films grown on off-axis Si(100)

(2012) A. Ouerghi et al.   APPLIED PHYSICS LETTERS

Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si

(2011) Hirokazu Fukidome et al.   Applied Physics Express

Large area quasi-free standing monolayer graphene on 3C-SiC(111)

(2011) C. Coletti et al.   APPLIED PHYSICS LETTERS

Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications

(2011) H. Fukidome et al.   JOURNAL OF MATERIALS CHEMISTRY

Ultrastrong adhesion of graphene membranes

(2011) Steven P. Koenig et al.   Nature Nanotechnology

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

(2011) W. A. de Heer et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

(2011) Li Wang et al.   THIN SOLID FILMS

Epitaxial graphene on cubic SiC(111)/Si(111) substrate

(2010) A. Ouerghi et al.   APPLIED PHYSICS LETTERS

Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111)

(2010) A. Ouerghi et al.   APPLIED PHYSICS LETTERS

Surface chemistry of Ni induced graphite formation on the 6H–SiC (0001) surface and its implications for graphene synthesis

(2010) A.A. Woodworth et al.   CARBON

Roll-to-roll production of 30-inch graphene films for transparent electrodes

(2010) Sukang Bae et al.   Nature Nanotechnology

Synthesis of graphene on silicon carbide substrates at low temperature

(2009) Zhen-Yu Juang et al.   CARBON

Size-Dependent Characteristics of Indium-Seeded Si Nanowire Growth

(2008) F. Iacopi et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS