A new aluminum iron oxide Schottky photodiode designed via sol—gel coating method

Comparative study of the electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes

(2013) Adem Tataroğlu   Chinese Physics B

Transparent conductive CuFeO2 thin films prepared by sol–gel processing

(2012) Hong-Ying Chen et al.   APPLIED SURFACE SCIENCE

Two diodes model and illumination effect on the forward and reverse bias I–V and C–V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature

(2012) S. Demirezen et al.   CURRENT APPLIED PHYSICS

Influence of illumination intensity and temperature on the electrical characteristics of an Al/p-GaAs/In structure prepared by thermal evaporation

(2012) M. Soylu et al.   MICROELECTRONIC ENGINEERING

Analysis of the series resistance and interface states of Au/Si3N4/n-Si (metal–insulator–semiconductor) Schottky diodes usingI–Vcharacteristics in a wide temperature range

(2012) F Z Pür et al.   PHYSICA SCRIPTA

Photoconductive Schottky diode based on Al/p-Si/SnS2/Ag for optical sensor applications

(2012) R.K. Gupta et al.   SOLAR ENERGY

Photodiodes based on graphene oxide–silicon junctions

(2012) D.-T. Phan et al.   SOLAR ENERGY

Structural and optical properties of nanostructure CdZnO films

(2012) R.K. Gupta et al.   SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY

Series resistance controlling photosensor of Ag/DNA/p-Si/Al diode

(2012) R.K. Gupta et al.   SYNTHETIC METALS

Transparent Conducting Oxides—An Up-To-Date Overview

(2012) Andreas Stadler   Materials

On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures

(2011) Habibe Uslu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures

(2011) V. Rajagopal Reddy et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Electrical-optical properties of nanofiber ZnO film grown by sol gel method and fabrication of ZnO/p-Si heterojunction

(2011) Sh. A. Mansour et al.   SOLID STATE SCIENCES

Analysis of current–voltage and capacitance–voltage-frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer

(2011) Durmuş Ali Aldemir et al.   THIN SOLID FILMS

Characterization of ion-implanted 4H-SiC Schottky barrier diodes

(2010) Wang Shou-Guo et al.   Chinese Physics B

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

(2010) V. Janardhanam et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Effect of temperature, illumination and frequency on the electrical characteristics of Cu/p-Si Schottky diode prepared by liquid phase epitaxy

(2010) A.A.M. Farag et al.   JOURNAL OF ALLOYS AND COMPOUNDS

The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer

(2010) İlke Taşçıoğlu et al.   JOURNAL OF APPLIED PHYSICS

Novel Materials through Non-Hydrolytic Sol-Gel Processing: Negative Thermal Expansion Oxides and Beyond

(2010) Cora Lind et al.   Materials

Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts

(2009) M Mamor   JOURNAL OF PHYSICS-CONDENSED MATTER

Current–voltage and capacitance–voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode

(2009) Y.S. Ocak et al.   SYNTHETIC METALS

A hybrid p-Si/poly(1,4-diaminoanthraquinone) photoconductive diode for optical sensor applications

(2008) Fahrettin Yakuphanoglu et al.   SYNTHETIC METALS