Article
Engineering, Electrical & Electronic
Yuanjie Lv, Yuangang Wang, Xingchang Fu, Shaobo Dun, Zhaofeng Sun, Hongyu Liu, Xingye Zhou, Xubo Song, Kui Dang, Shixiong Liang, Jincheng Zhang, Hong Zhou, Zhihong Feng, Shujun Cai, Yue Hao
Summary: This article reports the first vertical beta-Ga2O3 JBS diode, which successfully addresses the issue of sacrifice of p-type beta-Ga2O3 by using p-type NiO, achieving high breakdown voltage and low ON-resistance. Experimental results demonstrate that this diode has higher performance parameters and better combinations of forward current and breakdown voltage.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Hasan Efeoglu, Abdulmecit Turut
Summary: This study experimentally investigates the current-voltage-temperature characteristics of different Au/Cu/n-Si Schottky-barrier diodes with varying copper thickness. The results show that the Schottky barrier height increases with decreasing copper thickness, while the average series resistance and ideality factor are almost independent of the thickness. These findings highlight the importance of copper thickness in determining the quality of the diodes.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
Muharrem Gokcen, Songul Taran, Ersin Orhan
Summary: Polyvinyl alcohol (PVA) doped with di[1-(2-ethoxyethyl)-5-nitrobenzimidazole] cobalt dichloride was used as an interface in Au/n-Si diodes, with the electrical properties of the fabricated diodes examined under various ultraviolet illumination intensities. It was found that the ideality factor values of the diodes increased with increasing illumination, and the photo-responsivity of the PVA composite diode showed good performance.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
C. S. Guclu, A. F. Ozdemir, D. A. Aldemir, S. Altindal
Summary: This study analyzed the current conduction mechanisms of (Au/Ti)/Al2O3/n-GaAs (MIS) type SBDs in a wide temperature range (80-380K), finding that the BH increases with temperature and the reverse leakage current is primarily contributed by ohmic and TAT conduction mechanisms.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Seda Bengi, Esra Yukselturk, M. Mahir Bulbul
Summary: In this study, the I-V characteristics of the Al/HfO2/p-Si structure were investigated over a wide temperature range of 80-400 K. The zero-bias barrier height (phi(B)) and ideality factor (n) values were calculated using thermionic emission theory. The T-0 effect value was determined and the series resistance values were calculated. The energy distribution of interface state density profiles was obtained by considering the effective barrier height (phi(e)) and the voltage dependence of the ideality factor [n (V)].
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Materials Science, Multidisciplinary
Wei Jia, Berardi Sensale-Rodriguez
Summary: This article discusses the potential of using lateral Schottky diodes in wide bandgap semiconductors for high-speed modulation and low-loss metamaterial configurations in order to unlock the terahertz band for future 6G wireless communications.
OPTICAL MATERIALS EXPRESS
(2022)
Article
Engineering, Electrical & Electronic
Hasan Efeoglu, Abdulmecit Turut, Melik Gul
Summary: The I-V-T characteristics of metal-based Pt/n-Si and silicide-based PtSi/n-Si Schottky barrier (SB) diodes were compared in the temperature range of 40-320 K. The silicide-based diode exhibited lower series resistance (R-s) values (6.00 ohm at 40 K to 6.50 ohm at 320 K) than the metal-based diode (7.10 ohm at 40 K to 8.50 ohm at 320 K). The SB height values of the metal-based and silicide-based SB diodes were 0.806 eV and 0.875 eV, respectively, at 300 K, which matched the literature values. The silicide-based PtSi/n-Si diode's lower R-s and higher SB height provide clear evidence for its superior performance and reliability in Si technology. Additionally, the I-V curves of the silicide-based diode exhibited a double slope separated by a transition segment at temperatures below 170 K.
JOURNAL OF ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Zhongqi He, Jing Lan, Changjun Liu
Summary: Two high-efficiency RF rectifiers with extended input power range are proposed by utilizing the nonlinear impedance characteristics of diodes. Each rectifier operates at different power levels using a nonlinear power division strategy. The results show that both rectifiers achieve over 50% power conversion efficiency in different input power ranges.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Masoud Giyathaddin Obaid, Yusuf Selim Ocak, Borhan Aldeen Albiss, Mostefa Benhaliliba
Summary: ZrO2 thin films were deposited on n-Si and quartz substrates by reactive sputtering, showing smooth surface with 1.5 nm roughness and 5.7 eV optical band gap. An Au/ZrO2/n-Si metal-insulator-semiconductor (MIS) structure was formed by evaporating Au on ZrO2/n-Si structure. The electrical properties of the device, analyzed by current-voltage (I-V) measurements, revealed an ideality factor of 5.094, barrier height of 0.808 eV, and series resistance of 50 ?. Capacitance-voltage (C-V) measurements showed that the device could not follow AC signals at higher frequencies due to interface states, and the calculated barrier height value from C-V data (0.916 eV) was higher than the value obtained from I-V plot. The device exhibited photosensing behavior as determined by I-V measurements at various light intensities.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Physics, Applied
Hasan Efeoglu, Abdulmecit Turut
Summary: In this study, Schottky barrier diodes with different metal compositions were fabricated and their thermal sensitivity was measured through V-T characteristics. The results indicate that SBDs with a copper Schottky contact have approximately the same thermal sensitivity coefficient at different current levels.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
B. Akin, J. Farazin, S. Altindal, Y. Azizian-Kalandaragh
Summary: In this study, the performance of devices with (Al2O3:PVP) organic interlayer was investigated by growing different structures under the same conditions and conducting various tests and measurements. The results showed that the use of (Al2O3:PVP) interlayer can improve the electrical and dielectric properties of the devices.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Chemistry, Physical
Omer Sevgili, Faruk Ozel, Aydin Rusen, Evin Yigit, Ikram Orak
Summary: In this study, an Al/Ba2P2O7/p-Si device was fabricated using barium-based pyrophosphate at the interface layer. Characterization techniques such as AFM, SEM, and XRD were used to analyze the surface morphology and material characteristics. The electrical properties and photoresponsivity of the device were investigated, and various diode parameters were calculated. Additionally, the temperature response and capacitance-conductance-voltage characteristics of the device were studied.
SURFACES AND INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
A. Buyukbas-Ulusan, A. Tataroglu, S. Altindal-Yeriskin
Summary: Temperature-dependent electrical parameters and CTCs in Au/Al2O3/n-Si SDs were analyzed using IV characteristics within the temperature range of 200 K to 400 K. The quality factor (n) decreased while the zero bias potential barrier height (Phi(B0)) increased with increasing temperature. The Richardson constant (A*) and activation energy (Ea) were derived as 0.567 eV and 7.34 x 10(-3) A.cm(-2)K(-2), respectively. The deviation from the standard thermionic-emission (TE) model was determined by Phi(Bo) vs n and Phi(Bo) vs q/(2kT) curves.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2023)
Article
Engineering, Manufacturing
Norihiro Miyazawa, Naoto Usami, Haibin Wang, Takaya Kubo, Hiroshi Segawa, Takahito Takeda, Masaki Kobayashi, Yoshio Mita, Akio Higo
Summary: By utilizing the coaxial CTLM test structure, the research successfully identified the n-type ZnO/n-type Si heterojunction as Schottky type and estimated the band diagram of the heterojunction through X-ray photoemission spectroscopy measurements.
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
(2021)
Article
Physics, Condensed Matter
Muhammet Ferit Sahin, Enis Tasci, Mustafa Emrullahoglu, Halil Gokce, Nihat Tugluoglu, Serkan Eymur
Summary: A pi-conjugated BOD-Dim compound has been synthesized and characterized, showing great potential as a photosensor for optoelectronic device applications. The study investigated the electrical and photovoltaic parameters of the compound, confirming its photovoltaic behavior.
PHYSICA B-CONDENSED MATTER
(2021)
Article
Chemistry, Physical
A. Tataroglu, Abdullah G. Al-Sehemi, M. Ilhan, Ahmed A. Al-Ghamdi, F. Yakuphanoglu
Article
Chemistry, Physical
E. Aldirmaz, M. Guler, E. Guler, A. Dere, A. Tataroglu, Abdullah G. Al-Sehemi, Ahmed A. Al-Ghamdi, F. Yakuphanoglu
JOURNAL OF ALLOYS AND COMPOUNDS
(2018)
Article
Engineering, Electrical & Electronic
A. Buyukbas-Ulusan, S. Altindal Yeriskin, A. Tataroglu, M. Balbasi, Y. Azizian Kalandaragh
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2018)
Article
Engineering, Electrical & Electronic
A. Tataroglu, C. Ahmedova, G. Barim, Abdullah G. Al-Sehemi, Abdulkerim Karabulut, Ahmed A. Al-Ghamdi, W. A. Farooq, F. Yakuphanoglu
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2018)
Article
Engineering, Electrical & Electronic
F. Z. Acar, A. Buyukbas-Ulusan, A. Tataroglu
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2018)
Article
Physics, Condensed Matter
E. Aldirmaz, A. Tataroglu, A. Dere, M. Guler, E. Guler, A. Karabulut, F. Yakuphanoglu
PHYSICA B-CONDENSED MATTER
(2019)
Article
Materials Science, Multidisciplinary
N. Kaymak, E. Efil, E. Seven, A. Tataroglu, S. Bilge, E. Oz Orhan
MATERIALS RESEARCH EXPRESS
(2019)
Article
Engineering, Electrical & Electronic
A. Buyukbas-Ulusan, A. Tataroglu
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2020)
Article
Engineering, Electrical & Electronic
A. Tataroglu, S. Altindal, Y. Azizian-Kalandaragh
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2020)
Article
Engineering, Electrical & Electronic
R. Ertugrul-Uyar, A. Buyukbas-Ulusan, A. Tataroglu
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2020)
Article
Engineering, Electrical & Electronic
Sema Turkay, Adem Tataroglu
Summary: RF magnetron sputtering was used to grow silicon nitride thin film on GaAs substrate to form metal-oxide-semiconductor capacitor. The complex dielectric permittivity, complex electric modulus, and complex electrical conductivity of the prepared capacitor were studied in detail. The dielectric constant and loss decreased with increasing frequency, while increased with temperature, and the ac conductivity increased with both temperature and frequency. Activation energy was determined by Arrhenius equation, and the frequency dependence of ac conductivity was analyzed, providing the value of the frequency exponent.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
A. Buyukbas Ulusan, A. Tataroglu, S. Altindal, Y. Azizian-Kalandaragh
Summary: The Au/(CoFe2O4-PVP)/n-Si (MPS) diode exhibits good photoresponse characteristics, showing a strong response to illumination with a decrease in parameters such as phi(B0), n, R-s, and I-0 as illumination intensity increases. The double-logarithmic plot of I-ph-P has a slope of 1.27, indicating a lower density of unoccupied trap levels, and the photo-to-dark current ratio confirms the photosensitivity of the diode. The fabricated MPS diode can be used for photovoltaic applications.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Correction
Engineering, Electrical & Electronic
Sema Turkay, Adem Tataroglu
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Physics, Multidisciplinary
Esra Efil Kutluoglu, Elif Oz Orhan, Adem Tataroglu, Ozkan Bayram
Summary: Research on layered materials like graphene, which form Schottky diode-like junctions with semiconductor materials, is important for graphene-based integrated electronics. This study focuses on the current-voltage performance of Bilayer Graphene (BLGr) on Al2O3/p-Si and its influence on diode parameters. The analysis includes the use of Raman spectroscopy and various methods to calculate diode characteristics such as barrier height and series resistance.
Article
Physics, Multidisciplinary
O. Gullu, A. Tataroglu
Summary: A novel Al/CrO3/p-Si structure was fabricated by spin coating technique. The CrO3 thin layer was characterized using XRD, UV-vis, SEM, and AFM, showing an amorphous structure with an optical band energy of 3.96 eV. The electronic quantities of the Al/CrO3/p-Si junction were extracted using current-voltage (I-V) and capacitance-voltage data, revealing varying interfacial state concentrations under different illumination conditions. Furthermore, the photoelectric parameters of the Al/CrO3/p-Si contact were studied under 100 mW cm(-2) light illumination using I-V measurements.