Direct observation of conductive filament formation in Alq3 based organic resistive memories
Published 2015 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Direct observation of conductive filament formation in Alq3 based organic resistive memories
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 118, Issue 7, Pages 075501
Publisher
AIP Publishing
Online
2015-08-20
DOI
10.1063/1.4928622
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices
- (2015) Umberto Celano et al. Journal of Physical Chemistry Letters
- 3D imaging of filaments in organic resistive memory devices
- (2015) Yan Busby et al. ORGANIC ELECTRONICS
- Air-stable, non-volatile resistive memory based on hybrid organic/inorganic nanocomposites
- (2015) Giulia Casula et al. ORGANIC ELECTRONICS
- Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
- (2014) Haitao Sun et al. ADVANCED FUNCTIONAL MATERIALS
- Organic Non-Volatile Resistive Photo-Switches for Flexible Image Detector Arrays
- (2014) Sebastian Nau et al. ADVANCED MATERIALS
- Unravelling the Nature of Unipolar Resistance Switching in Organic Devices by Utilizing the Photovoltaic Effect
- (2014) Sebastian Nau et al. ADVANCED MATERIALS
- XPS Evidence for Negative Ion Formation in SIMS Depth Profiling of Organic Material with Cesium
- (2014) Nimer Wehbe et al. Journal of Physical Chemistry C
- Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
- (2014) Umberto Celano et al. NANO LETTERS
- Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
- (2014) Yuchao Yang et al. Nature Communications
- Metal-Free, Single-Polymer Device Exhibits Resistive Memory Effect
- (2013) Unnat S. Bhansali et al. ACS Nano
- Polymer-Based Resistive Memory Materials and Devices
- (2013) Wen-Peng Lin et al. ADVANCED MATERIALS
- Focused ion beam and field-emission microscopy of metallic filaments in memory devices based on thin films of an ambipolar organic compound consisting of oxadiazole, carbazole, and fluorene units
- (2013) Christopher Pearson et al. APPLIED PHYSICS LETTERS
- A tris(8-hydroxyquinoline) aluminum-based organic bistable device using ITO surfaces modified by Ag nanoparticles
- (2013) Bo Jiao et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
- (2013) Jui-Yuan Chen et al. NANO LETTERS
- Conductance quantization in a Ag filament-based polymer resistive memory
- (2013) Shuang Gao et al. NANOTECHNOLOGY
- Field-induced evolution of metallic nano-tips in indium tin oxide-tris-(8-hydroxyquinoline) aluminum-aluminum device
- (2012) Y. T. You et al. APPLIED PHYSICS LETTERS
- Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell
- (2012) Kyung Jean Yoon et al. NANOTECHNOLOGY
- Organic nonvolatile memory devices with charge trapping multilayer graphene film
- (2012) Yongsung Ji et al. NANOTECHNOLOGY
- Observation of conducting filament growth in nanoscale resistive memories
- (2012) Yuchao Yang et al. Nature Communications
- Electrical memory devices based on inorganic/organic nanocomposites
- (2012) Tae Whan Kim et al. NPG Asia Materials
- Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices
- (2011) Byungjin Cho et al. ADVANCED FUNCTIONAL MATERIALS
- Electrical bistability of tris-(8-hydroxyquinoline) aluminum (Alq3)/ZnSe organic-inorganic bistable device
- (2011) K. Onlaor et al. CURRENT APPLIED PHYSICS
- Investigation on the origin of the memory effect in metal/organic semiconductor/metal structures
- (2011) P. Sebastian et al. JOURNAL OF APPLIED PHYSICS
- Electronic, magnetic, and physical structure of cobalt deposited on aluminum tris(8-hydroxy quinoline)
- (2009) Weihao Xu et al. APPLIED PHYSICS LETTERS
- Multilevel conductance switching in organic memory devices based on AlQ3 and Al/Al2O3 core-shell nanoparticles
- (2009) V. S. Reddy et al. APPLIED PHYSICS LETTERS
- Resistive non-volatile memory devices (Invited Paper)
- (2009) Rainer Waser MICROELECTRONIC ENGINEERING
- Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
- (2009) Yu Chao Yang et al. NANO LETTERS
- Multilevel Nonvolatile Small-Molecule Memory Cell Embedded with Ni Nanocrystals Surrounded by a NiO Tunneling Barrier
- (2009) Jea-Gun Park et al. NANO LETTERS
- Overview of organic memory devices
- (2009) D. Prime et al. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
- Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices
- (2008) Tae-Wook Kim et al. APPLIED PHYSICS LETTERS
- Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum
- (2008) Jian Lin et al. JOURNAL OF APPLIED PHYSICS
- Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq3 thin film
- (2008) Po-Tsung Lee et al. ORGANIC ELECTRONICS
- Influence of top layer geometries on the electronic properties of pentacene and diindenoperylene thin films
- (2008) M. Scharnberg et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started