Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

(2014) Zhi Li et al.   JOURNAL OF APPLIED PHYSICS

Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well

(2013) Hongjian Li et al.   Applied Physics Express

Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization

(2013) Hongjian Li et al.   Applied Physics Express

Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer

(2013) Hongjian Li et al.   APPLIED PHYSICS LETTERS

Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN multiple-quantum well light emitting diodes

(2012) Lei Liu et al.   JOURNAL OF APPLIED PHYSICS

Investigation of fast and slow decays in InGaN/GaN quantum wells

(2011) Guan Sun et al.   APPLIED PHYSICS LETTERS

Carrier localization mechanisms in InxGa1−xN/GaN quantum wells

(2011) D. Watson-Parris et al.   PHYSICAL REVIEW B

Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization

(2010) Jiaxing Wang et al.   APPLIED PHYSICS LETTERS

Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells

(2010) T. Li et al.   APPLIED PHYSICS LETTERS

Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer

(2010) C. B. Soh et al.   JOURNAL OF APPLIED PHYSICS

White light emitting diodes with super-high luminous efficacy

(2010) Yukio Narukawa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN

(2009) G. Koblmüller et al.   APPLIED PHYSICS LETTERS

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

(2009) Jae-Hyun Ryou et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

New developments in green LEDs

(2009) Matthias Peter et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE