Article
Chemistry, Multidisciplinary
Shiyun Lei, Yuanyuan Xiao, Kanglin Yu, Biao Xiao, Ming Wan, Liyong Zou, Qingliang You, Renqiang Yang
Summary: This study investigates the hole injection mechanism in quantum dot light-emitting diodes (QLEDs) through a combination of experiments and simulations. It reveals that applied bias reduces the barrier height, facilitating hole injection and confining electrons within the quantum dots. The research also demonstrates that thermally assisted tunneling is the predominant pathway for hole injection. This study is significant for understanding the hole injection mechanism in QLEDs.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Shanshan Liang, Yunqi Wang, Hui Qi, Shujie Wang, Zuliang Du
Summary: The dual hole injection structure fabricated through the introduction of Ti3C2Tx film significantly enhances the external quantum efficiency of blue QLEDs. The modified Ti3C2Tx devices exhibit a 67% increase in peak EQE compared to the reference devices. This improvement can be attributed to the reduced energy barrier between ITO and PEDOT:PSS and the enhanced electrical stability of the ITO/PEDOT:PSS interface due to the Ti3C2Tx hole injection layer.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Engineering, Environmental
Qiqing Lu, Jingkun Wang, Yanqin Miao, Yuanyuan Guo, Guoliang Wang, Jianhua Dong, Min Zhao, Hua Wang
Summary: In this work, Ti3C2Tx-MXene nanosheets were successfully synthesized and used as hole injection layers in organic light-emitting diodes (OLEDs). The Ti3C2Tx-MXene nanosheets-based devices showed lower turn-on voltage and higher current efficiency, power efficiency, and external quantum efficiency compared to PEDOT:PSS-based reference devices. Furthermore, blue and red devices with Ti3C2Tx-MXene nanosheets as hole injection layers also demonstrated significantly improved efficiency, demonstrating the universal applicability of Ti3C2Tx-MXene nanosheets in OLEDs as hole injection materials.
CHEMICAL ENGINEERING JOURNAL
(2022)
Article
Chemistry, Physical
Seung-Gyun Choi, Hae-Jun Seok, Seunghyun Rhee, Donghyo Hahm, Wan Ki Bae, Han-Ki Kim
Summary: A novel V2O5 film was developed in this study to replace traditional PEDOT:PSS or solution-processed metal oxide HIL in QLEDs. By optimizing the sputtering conditions and oxygen flow rate, the V2O5 film achieved high optical transparency and a suitable work function, resulting in excellent performance of QLEDs.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Materials Science, Multidisciplinary
Wentao Tian, Mengran Liu, Shuti Li, Chao Liu
Summary: In this study, a hole accelerator structure is proposed to improve the optical power and efficiency of AlGaN-based DUV LEDs by analyzing and enhancing the hole injection efficiency. The results provide possibilities for high-power and high-efficiency applications.
OPTICAL MATERIALS EXPRESS
(2023)
Article
Materials Science, Multidisciplinary
Apostolis Verykios, Giorgos Pistolis, Lambros Bizas, Charalambos Tselios, Dimitris Tsikritzis, Stella Kennou, Christos L. Chochos, Dionysis E. Mouzakis, Panagiotis N. Skandamis, Abd Rashid bin Mohd Yusoff, Leonidas C. Palilis, Panagiotis Argitis, Maria Vasilopoulou, Anastasia Soultati
Summary: In this study, a simple and effective approach was proposed to modify the optoelectronic properties of PEDOT:PSS through the addition of TPS salts, resulting in improved hole injection and transport in OLEDs. The composite film PEDOT:PSS:TPSTriflate showed the highest luminous and power efficiency among all tested films, attributed to the increased conductivity and the formation of an interface exciplex between TPS-Triflate and the emissive copolymer.
ORGANIC ELECTRONICS
(2021)
Article
Chemistry, Multidisciplinary
Jianfei Li, Duo Chen, Kuilong Li, Qiang Wang, Mengyao Shi, Dejie Diao, Chen Cheng, Changfu Li, Jiancai Leng
Summary: The study suggests that a 20 nm-thick LT p-GaN layer can effectively prevent indium re-evaporation, enhance the quantum-confined Stark effect in the last quantum well of the active region, and reduce efficiency droop by about 7%.
Article
Nanoscience & Nanotechnology
Han Bin Cho, Ju Yeon Han, Ha Jun Kim, Noolu Srinivasa Manikanta Viswanath, Yong Min Park, Jeong Wan Min, Sung Woo Jang, Heesun Yang, Won Bin Im
Summary: Quantum dot light-emitting diodes (QLEDs) are promising for display applications. Polyethylenedioxythiophene:polystyrene sulfonate (PEDOT:PSS) is commonly used as a hole injection layer (HIL) material due to its high conductivity and work function. However, PEDOT:PSS-based QLEDs have a high energy barrier for hole injection, resulting in low device efficiency. Here, we demonstrate a bilayer-HIL using VO2 and a PEDOT:PSS-based QLED, which shows an 18% external quantum efficiency (EQE), 78 cd/A current efficiency (CE), and 25,771 cd/m(2) maximum luminance. This is compared to the PEDOT:PSS-based QLED with an EQE of 13%, CE of 54 cd/A, and maximum luminance of 14,817 cd/m(2). The increase in EQE is attributed to the reduction in the energy barrier between indium tin oxide (ITO) and PEDOT:PSS by the insertion of a VO(2) HIL. Therefore, our results demonstrate the effectiveness of a bilayer-HIL in increasing the EQE in QLEDs.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Computer Science, Information Systems
Sooyong Lee, Hwajeong Kim, Youngkyoo Kim
Summary: This study reports the hole injection role of p-type conjugated polymer layer in phosphorescent OLEDs, showing that P3HT layer can improve charge injection, enhance luminance and efficiency of OLEDs, with the annealing condition significantly affecting device performance.
Article
Optics
Yijian Zhou, Wenbo Peng, Guojiao Xiang, Yue Liu, Jiahui Zhang, Jinming Zhang, Rong Li, Xuefeng Zhu, Hui Wang, Yang Zhao
Summary: A high-quality CsPbBr3 film with excellent optical properties was obtained, and a p-NiO/CsPbBr3/n-GaN heterojunction diode with excellent electrical and luminous properties was prepared. The study also found that temperature has a significant impact on the luminous properties of the diode, indicating its potential application in the field of luminescence.
JOURNAL OF LUMINESCENCE
(2023)
Article
Physics, Applied
Mei Cui, Chenyu Guo, Zhenhai Yang, Li Chen, Yijun Dai, Houqiang Xu, Wei Guo, Jichun Ye
Summary: This paper investigates the application of conductive dielectric distributed Bragg reflectors (DBRs) in GaN-based light emitters. A conductive DBR was fabricated using the electrical breakdown technique. The optical simulations and electrical tests demonstrated its excellent performance. The conductive mechanisms were elaborated by comparing different metal electrodes. Ultimately, a conductive DBR with high reflectivity was successfully prepared.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Physics, Applied
Ah Hyun Park, Seungjae Baek, Go Bong Choi, Yoong Ahm Kim, Jinsub Lim, Tae Hoon Seo
Summary: In this study, green light emitting diodes (LEDs) with Au nanoclusters in a micro-hole patterned p-GaN layer (ANCs-MHPP) were demonstrated to have higher internal quantum efficiencies and faster decay times compared to conventional green LEDs. The remarkable opto-electronic performance of green LEDs with ANCs-MHPP is attributed to exciton-surface plasmon coupling and surface texturing effect caused by the micro-hole patterned p-GaN layer.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Maopeng Xu, Desui Chen, Jian Lin, Xiuyuan Lu, Yunzhou Deng, Siyu He, Xitong Zhu, Wangxiao Jin, Yizheng Jin
Summary: Researchers developed a set of NiOx HILs with controlled work functions for QLEDs, finding that using HILs with higher work functions can improve efficiency roll-off and operational stability.
Article
Chemistry, Physical
Maopeng Xu, Desui Chen, Jian Lin, Xiuyuan Lu, Yunzhou Deng, Siyu He, Xitong Zhu, Wangxiao Jin, Yizheng Jin
Summary: Researchers developed a new type of hole-injection layer with controlled work functions to improve the efficiency and stability of quantum-dot light-emitting diodes (QLEDs). The study found that hole-injection layers with higher work functions can enhance the efficiency and lifetime of the devices. This research provides important guidance for the future design of QLEDs.
Article
Multidisciplinary Sciences
Hyoun Ji Ha, Min Gye Kim, Jin Hyun Ma, Jun Hyung Jeong, Min Ho Park, Seong Jae Kang, Wonsik Kim, Soohyung Park, Seong Jun Kang
Summary: Low-temperature processing improves the stability and performance of flexible quantum dot light-emitting diodes (QLEDs). This study fabricated QLEDs with a suitable poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) hole transport layer (HTL) and a low-temperature solution-processable vanadium oxide hole injection layer. QLEDs with an optimal PTAA HTL had comparable luminance and current efficiency to conventional devices.
SCIENTIFIC REPORTS
(2023)
