期刊
APPLIED PHYSICS LETTERS
卷 105, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4904412
关键词
-
资金
- Department of Science and Technology [SERB/F/0894/2013-14]
Minimizing the dimensions of the electrode could directly impact the energy-efficient threshold switching and programming characteristics of phase change memory devices. A similar to 12-15 nm AFM probe-tip was employed as one of the electrodes for a systematic study of threshold switching of as-deposited amorphous GeTe6 thin films. This configuration enables low power threshold switching with an extremely low steady state current in the on state of 6-8 nA. Analysis of over 48 different probe locations on the sample reveals a stable Ovonic threshold switching behavior at threshold voltage, V-TH of 2.4 +/- 0.5V and the off state was retained below a holding voltage, V-H of 0.6 +/- 0.1 V. All these probe locations exhibit repeatable on-off transitions for more than 175 pulses at each location. Furthermore, by utilizing longer biasing voltages while scanning, a plausible nano-scale control over the phase change behavior from as-deposited amorphous to crystalline phase was studied. (C) 2014 AIP Publishing LLC.
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