Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 6, Issue 2, Pages 985-989Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am404285s
Keywords
EC-PEC; GaN LED; nanostructure; lift-off
Funding
- National Research Foundation of Korea (NRF)
- Ministry of Science, ICT & Future Planning [2013R1A2A2A07067688, 2010-0019626]
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Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. The structural quality and composition of the regrown LED film thus produced was similar to standard LED, but the photoluminescence and electroluminescence intensity of the LED structures on the etched template were several times higher than for standard LED. The performance enhancement was attributable to additional light scattering and improved crystalline quality as a result of the combined etching scheme.
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