Tunneling transport in a few monolayer-thick WS2/graphene heterojunction

Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides

(2014) Saptarshi Das et al.   ACS Nano

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

(2014) Rai Moriya et al.   APPLIED PHYSICS LETTERS

Highly Flexible Electronics from Scalable Vertical Thin Film Transistors

(2014) Yuan Liu et al.   NANO LETTERS

Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS2 Heterostructures

(2013) Nojoon Myoung et al.   ACS Nano

Electrical Spin Injection into Graphene through Monolayer Hexagonal Boron Nitride

(2013) Takehiro Yamaguchi et al.   Applied Physics Express

Characterization of metal contacts for two-dimensional MoS2 nanoflakes

(2013) Sumeet Walia et al.   APPLIED PHYSICS LETTERS

Origin of Indirect Optical Transitions in Few-Layer MoS2, WS2, and WSe2

(2013) Weijie Zhao et al.   NANO LETTERS

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

(2013) Woo Jong Yu et al.   Nature Nanotechnology

Electronic properties of the MoS2-WS2heterojunction

(2013) K. Kośmider et al.   PHYSICAL REVIEW B

Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films

(2013) L. Britnell et al.   SCIENCE

Electronic Band Structures of Molybdenum and Tungsten Dichalcogenides by the GW Approach

(2012) Hong Jiang   Journal of Physical Chemistry C

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

(2012) Liam Britnell et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

(2012) Woo Jong Yu et al.   NATURE MATERIALS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Effects of strain on band structure and effective masses in MoS2

(2012) H. Peelaers et al.   PHYSICAL REVIEW B

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

(2011) Gwan-Hyoung Lee et al.   APPLIED PHYSICS LETTERS

Quantum Hall effect and Landau-level crossing of Dirac fermions in trilayer graphene

(2011) Thiti Taychatanapat et al.   Nature Physics

Nobel Lecture: Graphene: Materials in the Flatland

(2011) K. S. Novoselov   REVIEWS OF MODERN PHYSICS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Tuning the Graphene Work Function by Electric Field Effect

(2009) Young-Jun Yu et al.   NANO LETTERS