Electrical Spin Injection into Graphene through Monolayer Hexagonal Boron Nitride

Spin Relaxation in Weak Localization Regime in Multilayer Graphene Spin Valves

(2013) Takehiro Yamaguchi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

(2013) Min Sup Choi et al.   Nature Communications

Effect of spin drift on spin accumulation voltages in highly doped silicon

(2012) Makoto Kameno et al.   APPLIED PHYSICS LETTERS

Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)

(2012) Thomas Maassen et al.   NANO LETTERS

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

(2012) Liam Britnell et al.   NANO LETTERS

A roadmap for graphene

(2012) K. S. Novoselov et al.   NATURE

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

(2012) Woo Jong Yu et al.   NATURE MATERIALS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Contact-induced spin relaxation in Hanle spin precession measurements

(2012) T. Maassen et al.   PHYSICAL REVIEW B

Tunneling spectroscopy of graphene-boron-nitride heterostructures

(2012) F. Amet et al.   PHYSICAL REVIEW B

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

(2011) Gwan-Hyoung Lee et al.   APPLIED PHYSICS LETTERS

Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface

(2011) Takehiro Yamaguchi et al.   JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

Spin transport and relaxation in graphene

(2011) Wei Han et al.   JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

Toward Wafer Scale Fabrication of Graphene Based Spin Valve Devices

(2011) Ahmet Avsar et al.   NANO LETTERS

Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

(2011) Alexander S. Mayorov et al.   NANO LETTERS

Quantum Hall effect and Landau-level crossing of Dirac fermions in trilayer graphene

(2011) Thiti Taychatanapat et al.   Nature Physics

Ni(111)|graphene|h-BN junctions as ideal spin injectors

(2011) V. M. Karpan et al.   PHYSICAL REVIEW B

Spin Relaxation in Single-Layer and Bilayer Graphene

(2011) Wei Han et al.   PHYSICAL REVIEW LETTERS

Observation of Long Spin-Relaxation Times in Bilayer Graphene at Room Temperature

(2011) T.- Y. Yang et al.   PHYSICAL REVIEW LETTERS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Tunneling Spin Injection into Single Layer Graphene

(2010) Wei Han et al.   PHYSICAL REVIEW LETTERS

Manipulation of Spin Transport in Graphene by Surface Chemical Doping

(2010) K. Pi et al.   PHYSICAL REVIEW LETTERS

Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride

(2009) Oleg V. Yazyev et al.   PHYSICAL REVIEW B

Controlling the efficiency of spin injection into graphene by carrier drift

(2009) C. Józsa et al.   PHYSICAL REVIEW B