The enhanced polarization relaxation and excellent high-temperature dielectric properties of N-doped SiC
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Title
The enhanced polarization relaxation and excellent high-temperature dielectric properties of N-doped SiC
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 5, Pages 052102
Publisher
AIP Publishing
Online
2014-02-05
DOI
10.1063/1.4864062
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