The enhanced polarization relaxation and excellent high-temperature dielectric properties of N-doped SiC

标题
The enhanced polarization relaxation and excellent high-temperature dielectric properties of N-doped SiC
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 104, Issue 5, Pages 052102
出版商
AIP Publishing
发表日期
2014-02-05
DOI
10.1063/1.4864062

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