Microwave properties of semi-insulating silicon carbide between 10 and 40 GHz and at cryogenic temperatures

Title
Microwave properties of semi-insulating silicon carbide between 10 and 40 GHz and at cryogenic temperatures
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 109, Issue 6, Pages 064107
Publisher
AIP Publishing
Online
2011-03-25
DOI
10.1063/1.3561431

Ask authors/readers for more resources

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started