Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera

High precision two-dimensional strain mapping in semiconductor devices using nanobeam electron diffraction in the transmission electron microscope

(2014) Frieder H. Baumann   APPLIED PHYSICS LETTERS

Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

(2014) R. Cipro et al.   APPLIED PHYSICS LETTERS

Structure refinement from precession electron diffraction data

(2013) Lukáš Palatinus et al.   ACTA CRYSTALLOGRAPHICA SECTION A

Improved strain precision with high spatial resolution using nanobeam precession electron diffraction

(2013) Jean-Luc Rouviere et al.   APPLIED PHYSICS LETTERS

High mobility CMOS technologies using III–V/Ge channels on Si platform

(2013) S. Takagi et al.   SOLID-STATE ELECTRONICS

Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography

(2013) A. Béché et al.   ULTRAMICROSCOPY

Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy

(2012) Knut Müller et al.   MICROSCOPY AND MICROANALYSIS

NIH Image to ImageJ: 25 years of image analysis

(2012) Caroline A Schneider et al.   NATURE METHODS

CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs

(2012) L. Czornomaz et al.   SOLID-STATE ELECTRONICS

On the alignment for precession electron diffraction

(2012) Yifeng Liao et al.   ULTRAMICROSCOPY

Automated nanocrystal orientation and phase mapping in the transmission electron microscope on the basis of precession electron diffraction

(2010) Edgar F. Rauch et al.   ZEITSCHRIFT FUR KRISTALLOGRAPHIE

Improved precision in strain measurement using nanobeam electron diffraction

(2009) A. Béché et al.   APPLIED PHYSICS LETTERS