High precision two-dimensional strain mapping in semiconductor devices using nanobeam electron diffraction in the transmission electron microscope

Published 2014 View Full Article

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Title
High precision two-dimensional strain mapping in semiconductor devices using nanobeam electron diffraction in the transmission electron microscope
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 26, Pages 262102
Publisher
AIP Publishing
Online
2014-07-02
DOI
10.1063/1.4886137
References
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