Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering

(2014) C. Merckling et al.   JOURNAL OF APPLIED PHYSICS

High mobility CMOS technologies using III–V/Ge channels on Si platform

(2013) S. Takagi et al.   SOLID-STATE ELECTRONICS

Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary Formation

(2012) R. Loo et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs

(2012) L. Czornomaz et al.   SOLID-STATE ELECTRONICS

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today