Voltage switching of a VO2 memory metasurface using ionic gel

Two-dimensional reconfigurable gradient index memory metasurface

(2013) M. D. Goldflam et al.   APPLIED PHYSICS LETTERS

Correlated Electron Materials and Field Effect Transistors for Logic: A Review

(2013) You Zhou et al.   CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES

Electrical Modulation of Fano Resonance in Plasmonic Nanostructures Using Graphene

(2013) Naresh K. Emani et al.   NANO LETTERS

Measurement of a solid-state triple point at the metal–insulator transition in VO2

(2013) Jae Hyung Park et al.   NATURE

Electric-double-layer field-effect transistors with ionic liquids

(2013) Takuya Fujimoto et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Anisotropic Electronic State via Spontaneous Phase Separation in Strained Vanadium Dioxide Films

(2013) M. K. Liu et al.   PHYSICAL REVIEW LETTERS

Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation

(2013) J. Jeong et al.   SCIENCE

“Cut and Stick” Rubbery Ion Gels as High Capacitance Gate Dielectrics

(2012) Keun Hyung Lee et al.   ADVANCED MATERIALS

Collective bulk carrier delocalization driven by electrostatic surface charge accumulation

(2012) M. Nakano et al.   NATURE

Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial

(2012) Mengkun Liu et al.   NATURE

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

THz spectroscopy of VO2epitaxial films: controlling the anisotropic properties through strain engineering

(2012) Elsa Abreu et al.   NEW JOURNAL OF PHYSICS

Photoemission evidence for crossover from Peierls-like to Mott-like transition in highly strained VO2

(2012) J. Laverock et al.   PHYSICAL REVIEW B

Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices

(2012) B. C. Chapler et al.   PHYSICAL REVIEW B

A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

(2011) W. C. Chien et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Electrical control of terahertz nano antennas on VO_2 thin film

(2011) Young-Gyun Jeong et al.   OPTICS EXPRESS

Electrolyte Gate-Controlled Kondo Effect inSrTiO3

(2011) Menyoung Lee et al.   PHYSICAL REVIEW LETTERS

Electric-Field Control of the Metal-Insulator Transition in Ultrathin NdNiO3 Films

(2010) Raoul Scherwitzl et al.   ADVANCED MATERIALS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Liquid-gated interface superconductivity on an atomically flat film

(2009) J. T. Ye et al.   NATURE MATERIALS

Polarization-independent active metamaterial for high-frequency terahertz modulation

(2009) Oliver Paul et al.   OPTICS EXPRESS

Frequency tunable near-infrared metamaterials based on VO_2 phase transition

(2009) Matthew J. Dicken et al.   OPTICS EXPRESS

Large Electric Field Effect in Electrolyte-Gated Manganites

(2009) Anoop Singh Dhoot et al.   PHYSICAL REVIEW LETTERS

Memory Metamaterials

(2009) T. Driscoll et al.   SCIENCE

Electrostatic modification of infrared response in gated structures based on VO2

(2008) M. M. Qazilbash et al.   APPLIED PHYSICS LETTERS

Interactions and Dynamics in Ionic Liquids

(2008) Alexander Stoppa et al.   JOURNAL OF PHYSICAL CHEMISTRY B