期刊
APPLIED PHYSICS LETTERS
卷 104, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4886404
关键词
-
资金
- LabEx Minos [ANR-10-LABX-55-01]
- French Recherches Technologiques de Base (Basis Technological Research) program
- RENATECH program
Metal organic chemical vapor deposition of GaAs, InGaAs, and AlGaAs on nominal 300 mm Si(100) at temperatures below 550 degrees C was studied using the selective aspect ratio trapping method. We clearly show that growing directly GaAs on a flat Si surface in a SiO2 cavity with an aspect ratio as low as 1.3 is efficient to completely annihilate the anti-phase boundary domains. InGaAs quantum wells were grown on a GaAs buffer and exhibit room temperature micro-photoluminescence. Cathodoluminescence reveals the presence of dark spots which could be associated with the presence of emerging dislocation in a direction parallel to the cavity. The InGaAs layers obtained with no antiphase boundaries are perfect candidates for being integrated as channels in n-type metal oxide semiconductor field effect transistor (MOSFET), while the low temperatures used allow the co-integration of p-type MOSFET. (C) 2014 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据